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Film deposition method and device by sputtering

A sputtering equipment, sputtering target technology, applied in sputtering coating, cathode sputtering application, application of magnetic film to substrate, etc., can solve the problem of difficult to increase at the same time

Active Publication Date: 2010-06-30
CANON ANELVA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The method for increasing the resonance frequency includes increasing the anisotropic magnetic field Hk or the saturation magnetization Ms, but it is generally difficult to increase both Hk and Ms at the same time, and Hk and Ms are in a trade-off relationship

Method used

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  • Film deposition method and device by sputtering
  • Film deposition method and device by sputtering
  • Film deposition method and device by sputtering

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Embodiment Construction

[0082] Figure 4A It is a side view of the first sputtering apparatus 400 according to the present invention. Figure 4B It is a perspective view of the first sputtering device 400 according to the present invention. The sputtering device 400 includes: a stage 401 for mounting a substrate 404; and a cathode 402 for supporting a target 403, wherein the target support surface of the cathode 402 and the substrate support surface of the stage 401 are configured to Face each other. The stage 401 and the cathode 402 are respectively provided with a rotation axis A and a rotation axis B, and the stage 401 and the cathode 402 are configured to be rotatable at any angle around the rotation axis A and the rotation axis B, respectively. For example, a rotating member such as a motor may be used to rotate the stage 401 and the cathode 402, and the above-mentioned rotating member may be controlled by a control device. The rotation axis A and the rotation axis B are arranged to be parallel ...

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Abstract

A sputtering system performing oblique film deposition by arranging a target and a substrate such that sputter particles discharged from the target enter the substrate obliquely and selectively, and depositing a magnetic film having high uniaxial magnetic anisotropy uniformly and compactly. The sputtering system comprises a cathode having a sputtering target supporting surface and an axis about which the sputtering target supporting surface rotates, and a stage having a substrate supporting surface and an axis about which the substrate supporting surface rotates wherein the sputtering target supporting surface and the substrate supporting surface are opposing each other and rotatable independently about respective axes of rotation. Furthermore, a shield plate is arranged between the sputtering target supporting surface and the substrate supporting surface and rotatable independently from the cathode and the stage.

Description

Technical field [0001] The invention relates to a film forming method by sputtering and its sputtering equipment. Background technique [0002] In recent years, high-frequency applications of magnetic elements have been expanded in read / write heads, microinductors, microtransformers, and the like, and magnetic thin films with good high-frequency characteristics in the GHz band are also required. Therefore, related research and development are actively carried out. In order to use the magnetic thin film in the high frequency band, the resistance of the thin film needs to be increased, thereby reducing the eddy current loss and increasing the resonance frequency. The method for increasing the resonance frequency includes increasing the anisotropic magnetic field Hk or the saturation magnetization Ms, but it is generally difficult to increase both Hk and Ms at the same time. Hk and Ms are in a trade-off relationship. However, in recent years, by using a sputtering method or an ion...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/54
CPCH01J37/3435H01J37/34H01J37/3405C23C14/505C23C14/225C23C14/3407C23C14/044H01F41/18H01J37/3455H01J37/3414C23C14/548
Inventor 远藤彻哉爱因斯坦·诺埃尔·阿巴拉
Owner CANON ANELVA CORP
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