Complementary SCR structure triggered with assistance of Zener diode
A Zener diode, complementary technology, applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problems of high trigger voltage avalanche breakdown voltage, difficulty in applying integrated circuit ESD protection, etc., and achieve silicon chip The effect of small area and low trigger voltage
Inactive Publication Date: 2011-07-20
ZHEJIANG UNIV
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Problems solved by technology
[0011] The disadvantage of the above complementary SCR structure is mainly that its trigger voltage (avalanche breakdown voltage between the N-type substrate and the P well) is so high that it is difficult to apply to the on-chip ESD protection of integrated circuits under deep submicron technology.
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[0053] A complementary SCR structure triggered by a zener diode in the present invention, its equivalent circuit diagram is as follows image 3 As shown, it includes:
[0054] The first thyristor SCR1 is composed of a first bipolar transistor 30 and a second bipolar transistor 31, wherein the emitter of the first bipolar transistor 30 is connected to the positive power supply line VDD, and the emitter of the first bipolar transistor 30 The base is connected to the positive power supply line VDD through the N-well resistor 36; the emitter of the second bipolar transistor 31 is connected to the chip pin IN to be protected, and the base of the second bipolar transistor 31 is connected to the VDD through the P-well resistor 37. Negative power supply line VSS;
[0055] The second thyristor SCR2 is composed of a third bipolar transistor 32 and a fourth bipolar transistor 33, wherein the emitter of the third bipolar transistor 32 is connected to the chip pin IN to be protected, and ...
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The invention discloses a complementary SCR structure triggered with assistance of a Zener diode. A first silicon controlled rectifier is formed by two bipolar transistors and is used for ESD protection between a positive power line and a chip pin required to be protected. A second silicon controlled rectifier is formed by another two bipolar transistors and is used for ESD protection between thechip pin required to be protected and a negative power line. A third silicon controlled rectifier is formed by one bipolar transistor of the first silicon controlled rectifier and one bipolar transistor of the second silicon controlled rectifier, and is used for ESD protection between the positive power line and the negative power line. The complementary SCR structure adopts the Zener diode to reduce the trigger voltage of each silicon controlled rectifier and is particularly suitable for the on-chip ESP protection of circuits integrated by using a deep sub-micron technology.
Description
technical field [0001] The invention belongs to the field of integrated circuits, in particular to a complementary SCR structure used to improve the reliability of integrated circuit ESD protection. Background technique [0002] The phenomenon of electrostatic discharge (ESD) in nature is the most important reliability problem that causes the failure of integrated circuit products. Relevant research surveys show that 30% of integrated circuit failure products are caused by electrostatic discharge phenomena. Therefore, improving the reliability of integrated circuit electrostatic discharge protection has a non-negligible effect on improving the yield of products and even driving the entire national economy. [0003] Electrostatic discharge phenomenon is usually divided into three discharge modes according to the source of charge: HBM (Human Body Discharge Model), MM (Machine Discharge Mode), and CDM (Component Charge Discharge Mode). The two most common electrostatic discha...
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IPC IPC(8): H01L27/07H01L23/60
Inventor 李明亮董树荣韩雁宋波苗萌马飞
Owner ZHEJIANG UNIV