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Lighting element with patterned surface

A light-emitting element and patterning technology, applied in the manufacturing of electrical components, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problems of inability to effectively control the coarsening size, poor light extraction efficiency, difficult epitaxial growth, etc.

Active Publication Date: 2010-07-21
EPISTAR CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the pattern design of the general substrate surface 701a has a ratio of the pattern width to the interval between the patterns about 1, there is still most of the surface area parallel to the surface 705a of the active layer, and the light emitted from the active layer 705 to this area , easy to return to the epitaxial stack through total reflection, and be absorbed and converted into heat, resulting in poor light extraction efficiency and heat dissipation problems
In addition, in order to compensate for the light loss caused by parallel regions, the depth of the pattern is usually deepened to improve the light extraction efficiency of the patterned substrate, but thus forming a patterned surface with a high aspect ratio (aspectratio), which makes subsequent epitaxial growth difficult, and affect the epitaxial quality of components
[0004] In addition, the known surface roughening technology uses mechanical grinding to form a randomly distributed rough surface on the substrate surface. This method cannot effectively control the roughening size, such as depth or width; moreover, growth on this messy surface Epitaxial layer, easy to cause poor quality of epitaxial layer

Method used

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  • Lighting element with patterned surface
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Embodiment Construction

[0028] figure 1 A light-emitting element 100 according to the present invention is disclosed, including a growth substrate 101, an intermediate layer including a lattice buffer layer 102 and / or a non-doped semiconductor layer 103 epitaxially formed on the growth substrate 101, and a first contact layer with a first dopant 104 is epitaxially formed on the non-doped semiconductor layer 103, the first confinement layer 105 with the first dopant is epitaxially formed on the first contact layer 104, the active layer 106 is epitaxially formed on the first confinement layer 105, has the first The second confinement layer 107 with the second dopant is epitaxially formed on the active layer 106, the second contact layer 108 with the second dopant is epitaxially formed on the second confinement layer 107, and the current spreading layer 109 is formed on the second contact. layer 108, and form a good ohmic contact with the second contact layer 108, the first electrode 110 is formed by e...

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Abstract

The invention discloses a lighting element with a patterned surface. The lighting element comprises a substrate, an intermediate layer, a first doped semiconductor layer, a second doped semiconductor layer, an active layer and a patterned surface, wherein the intermediate layer is formed on the substrate; the first doped semiconductor layer is formed on the intermediate layer and provided with a first doping material; the second doped semiconductor layer is formed on the first doped semiconductor layer and provided with a second doping material; the active layer is arranged between the first doped semiconductor layer and the second doped semiconductor layer; and the patterned surface is provided with a plurality of cell patterns which are regularly arranged, and the patterned surface is virtually unparallel to the corresponding area of the active layer surface.

Description

technical field [0001] The invention relates to a light-emitting element with a patterned surface. Background technique [0002] In recent years, light-emitting diode components have been devoted to improving brightness, and they are expected to be finally applied in the field of lighting to exert energy-saving and carbon-saving effects. The improvement of brightness is mainly divided into two parts, one is the improvement of internal quantum efficiency (Internal Quantum Efficiency; IQE), which mainly improves the combination efficiency of electrons and holes through the improvement of epitaxial quality; the other is light extraction efficiency (Light Extraction Efficiency) ; LEE) is mainly focused on making the light emitted by the light-emitting layer penetrate to the outside of the element effectively, reducing the light absorbed by the internal structure of the light-emitting diode. [0003] Surface roughening technology is regarded as one of the methods to effectively ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L21/3213H01L21/20
Inventor 欧震姚久琳
Owner EPISTAR CORP