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Memory cell having improved mechanical stability and manufacturing method thereof

A technology of storage unit and storage element, which is applied in the direction of information storage, static memory, digital memory information, etc., and can solve the problems of electrode poor adhesion, bottom electrode falling off, etc.

Active Publication Date: 2010-07-21
MACRONIX INT CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] A problem associated with manufacturing such devices with a very small electrode is that the very small electrode will have poor adhesion, which can cause the bottom electrode to fall off during the manufacturing process.

Method used

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  • Memory cell having improved mechanical stability and manufacturing method thereof
  • Memory cell having improved mechanical stability and manufacturing method thereof
  • Memory cell having improved mechanical stability and manufacturing method thereof

Examples

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Embodiment Construction

[0119] The following description of the invention refers to specific structural embodiments and methods. It is to be understood that the scope of the invention is not limited to the specific disclosed embodiments and that the invention can be practiced with other features, elements, methods and embodiments. The preferred embodiments are described to understand the present invention, but not to limit the scope of the present invention, which is defined by the claims. Those skilled in the art can understand equivalent changes of the present invention according to the subsequent description. Similar elements in various embodiments will be designated with similar reference numerals.

[0120] Subsequent descriptions of the invention will refer to Figure 1 to Figure 21 .

[0121] figure 1 A cross-sectional view of the prior art is shown with an "umbrella" memory cell 100 having a memory material layer 130 between a bottom electrode 120 and a top electrode 140 . A conductive pl...

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Abstract

Memory cells are described along with methods for manufacturing. A memory cell described herein includes a bottom electrode comprising a base portion and a pillar portion on the base portion, the pillar portion and the base portion having respective outer surfaces and the pillar portion having a width less than that of the base portion. A memory element is on a top surface of the pillar portion of the bottom electrode, and a top electrode is on the memory element. A dielectric spacer contacts the outer surface of the pillar portion, the outer surface of the base portion of the bottom electrode self-aligned with an outer surface of the dielectric spacer.

Description

technical field [0001] The present invention relates to high density memory devices based on programmable resistive materials, including phase change materials such as chalcogenides, and methods of making the same. Background technique [0002] Such phase change memory materials, such as chalcogenides and similar materials, can be induced to change crystal phase by applying a current of magnitude suitable for use in integrated circuits. This property has sparked interest in using programmable resistive materials to form nonvolatile memory circuits, among other things. The generally amorphous phase state is characterized by a higher resistivity than the generally crystalline phase state; this difference in resistance can be sensed as an indication of data. These properties have attracted attention to the use of programmable resistive materials to form nonvolatile memory circuits that can be randomly accessed for reading and writing. [0003] The change from amorphous to cry...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00G11C11/56
CPCG11C11/5678H01L27/101H01L45/04G11C13/0004H10N70/20H10N70/8418H10N70/8413H10N70/881H10N70/231H10N70/8825H10N70/884H10N70/8836H10N70/8828H10N70/8833H10N70/063H10N70/826
Inventor 汤玛斯·D·汉普陈逸舟蹇·鲍里斯·菲利普龙翔澜
Owner MACRONIX INT CO LTD
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