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Tungstate low-temperature sintered microwave dielectric ceramic material and preparation method thereof

A technology of microwave dielectric ceramics and ceramic materials, which is applied in the field of microwave communication and its manufacturing, can solve the problems of increasing ceramic loss, reducing material willfulness, etc., and achieves the effects of high frequency temperature coefficient, low sintering temperature and simple chemical composition.

Inactive Publication Date: 2010-08-11
GUILIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, both of these methods will introduce low-melting point phases, which will increase the loss of ceramics and reduce the willfulness of materials.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] The analytically pure chemical raw materials ZnO, Li 2 CO 3 、Sm 2 o 3 and WO 3 Press Zn 0.95 (Li 0.5 SM 0.5 ) 0.05 WO 4 After the molecular formula is prepared, it is fully mixed and ball milled for 4 hours, dried at 120°C to 140°C after grinding, sieved, pressed into a block, placed in an alumina crucible, and heated at a heating rate of 5°C / min to 800°C, keep warm for 4 hours, then pulverize the burnt block, ball mill it for the second time, take it out, dry it and granulate it, and then sieve it with 60-mesh and 120-mesh sieves to obtain the desired ceramic material. After the ceramic material is pressed into shape (sheet or column) as required, and then sintered at 850° C. to 900° C. for 2 hours, a low-temperature sintered microwave dielectric ceramic material can be obtained. The microwave properties of the material at different sintering temperatures are shown in Table 1.

[0015] Microwave performance under table 1 embodiment 1 different sintering tempe...

Embodiment 2

[0018] The analytically pure chemical raw materials ZnO, Li 2 CO 3 、Sm 2 o 3 and WO 3 Press Zn 0.925 (Li 0.5 SM 0.5 ) 0.075 WO 4 After the molecular formula is prepared, it is fully mixed and ball milled for 4 hours, dried at 120°C to 140°C after grinding, sieved, pressed into a block, placed in an alumina crucible, and heated at a heating rate of 5°C / min to 800°C, keep warm for 4 hours, then pulverize the burnt block, ball mill it for the second time, take it out, dry it and granulate it, and then sieve it with 60-mesh and 120-mesh sieves to obtain the desired ceramic material. After the ceramic material is pressed into shape (sheet or column) as required, and then sintered at 850° C. to 900° C. for 2 hours, a low-temperature sintered microwave dielectric ceramic material can be obtained. The microwave properties of the material at different sintering temperatures are shown in Table 2.

[0019] Microwave properties under table two embodiment 2 different sintering te...

Embodiment 3

[0022] The analytically pure chemical raw materials ZnO, Li 2 CO 3 、Sm 2 o 3 and WO 3 Press Zn 0.9 (Li 0.5 SM 0.5 ) 0.1 WO 4 After the molecular formula is prepared, it is fully mixed and ball milled for 4 hours, dried at 120°C to 140°C after grinding, sieved, pressed into a block, placed in an alumina crucible, and heated at a heating rate of 5°C / min to 800°C, keep warm for 4 hours, then pulverize the burnt block, ball mill it for the second time, take it out, dry it and granulate it, and then sieve it with 60-mesh and 120-mesh sieves to obtain the desired ceramic material. After the ceramic material is pressed into shape (sheet or column) as required, and then sintered at 850° C. to 900° C. for 2 hours, a low-temperature sintered microwave dielectric ceramic material can be obtained. The microwave properties of the material at different sintering temperatures are shown in Table 3.

[0023] Microwave performance under table three embodiment 3 different sintering tem...

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Abstract

The invention discloses a tungstate low-temperature sintered microwave dielectric ceramic material and a preparation method thereof. The molecular structure expression of the material is that: [Zn1-x(Li0.5Sm0.5)x]WO4, wherein x is more than or equal to 0.05 and less than or equal to 0.8. The preparation method comprises the following steps of: mixing prepared chemical raw materials, adding alcohol into the mixture, mixing the mixture for 4 hours by a wet milling process, drying, sieving and pressing the mixture to form blocky materials, putting the blocky materials into an alumina crucible, raising the temperature to between 700 and 800 DEG C at a speed of 5 DEG C / min, and preserving the heat for 4 to 8 hours to obtain clinkers; crushing the clinkers, performing secondary ball milling and drying and pelletizing to obtain porcelain; and sintering the porcelain at the temperature of between 800 and 850 DEG C for 2 to 4 hours. The microwave dielectric ceramic material has the advantages of simple chemical composition and preparation process and low inherent sintering temperature (between 800 and 850 DEG C). By the preparation method, the prepared ceramic material has a dielectric constant of 14 to 17, high Q*f and low temperature frequency coefficient. The material and the preparation method can be used for manufacturing microwave devices, such as low temperature co-fired ceramics (LTCC), multilayer dielectric resonators, microwave antennae, filters and the like.

Description

technical field [0001] The invention belongs to the field of microwave communication and its manufacture, in particular to a tungstate low-temperature sintered microwave dielectric ceramic material and a preparation method thereof. Background technique [0002] With the rapid development of the communication industry, the demand for miniaturized and high-performance microwave devices in various mobile communication devices is increasing, and the research and practical application of microwave dielectric ceramics have also made great progress. In order to meet the miniaturization requirements of mobile communication terminal equipment, the use of low temperature co-fired ceramics (LTCC for short) technology and multilayer structure composite technology to develop chip multilayer microwave devices has become a current research hotspot. The co-firing temperature of low-temperature co-fired ceramics (LTCC) is generally between 800°C and 950°C. Due to the low sintering temperatu...

Claims

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Application Information

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IPC IPC(8): C04B35/495C04B35/622
Inventor 周焕福陈秀丽方亮
Owner GUILIN UNIVERSITY OF TECHNOLOGY
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