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Method for preparing medium bridge by using polyimide

A technology of polyimide and cloth polyimide is applied in the field of using polyimide to make dielectric bridges, which can solve the problems of easy cracking of bridge decks, and achieve high reliability, simple process steps, and controllable processes. effect of steps

Active Publication Date: 2010-08-11
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

[0006] In view of this, the main purpose of the present invention is to provide a method for making a dielectric bridge using polyimide, to simplify the manufacturing process, improve the reliability of the dielectric bridge, and solve the problem that the bridge deck is prone to fracture in the traditional air bridge process

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  • Method for preparing medium bridge by using polyimide
  • Method for preparing medium bridge by using polyimide
  • Method for preparing medium bridge by using polyimide

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Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0027] Such as figure 2 as shown, figure 2 The flow chart of the method for utilizing polyimide to make a dielectric bridge provided by the present invention, the method may further comprise the steps:

[0028] Step 201: Coating photoresist on the substrate, and photoetching the bridge surface;

[0029] Step 202: evaporating the metal, and forming a bridge deck after peeling off;

[0030] Step 203: Coating photoresist on the substrate and photoetching bridge piers;

[0031] Step 204: evaporating the metal, and forming a bridge pier after peeling off;

[0032] Step 205: Coating polyimide on the substrate and curing at high temperature;

[0033] Step 206: using dry etching to etch away the excess polyimide until the ...

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Abstract

The invention discloses a method for preparing a medium bridge by using polyimide. The method comprises the following steps: coating a photoresist on a substrate and performing photo-etching to obtain a bridge deck; evaporating and stripping metal to form the bridge deck; coating the photoresist on the substrate and performing photo-etching to obtain a bridge pier; evaporating and stripping the metal to form the bridge pier; coating the polyimide on the substrate and solidifying the coated polyimide at a high temperature; etching residual polyimide by dry etching until the bridge pier is exposed; coating the photoresist on the polyimide and performing photo-etching to obtain a bridge pier lead; and evaporating and stripping the metal to form the bridge pier lead. The medium bridge prepared by the method takes the polyimide as a medium, and the bridge deck length of the medium bridge is not limited on the aspect of maximum span compared with a conventional air bridge, so the problem that the bridge deck in traditional air bridge process is easy to break is solved.

Description

technical field [0001] The invention relates to the technical field of manufacturing technology of semiconductor devices and integrated circuits, in particular to a method for making a dielectric bridge by using polyimide. Background technique [0002] In semiconductor devices and integrated circuits, it is often necessary to use an air bridge structure at the intersection of two wirings to realize the cross-connection of two layers of metal. The air bridge can be prepared by evaporating metal or electroplating metal, but the process is complicated and requires multiple photolithography. [0003] At present, there are three common methods for making air bridges. One is to use composite glue electroplating to make air bridges, the other is to use photoresist to transfer the required graphics to the sacrificial layer to make air bridges, and the third is to use photosensitive adhesive layer to make air bridges. . The air bridge made by these three methods, the final shape of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
Inventor 程伟金智苏永波刘新宇
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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