Method for preparing medium bridge by using polyimide
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- INST OF MICROELECTRONICS CHINESE ACAD OF SCI
- Publication Date
- 2010-08-11
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The invention relates to the technical field of manufacturing technology of semiconductor devices and integrated circuits, in particular to a method for making a dielectric bridge by using polyimide. Background technique
[0002] In semiconductor devices and integrated circuits, it is often necessary to use an air bridge structure at the intersection of two wirings to realize the cross-connection of two layers of metal. The air bridge can be prepared by evaporating metal or electroplating metal, but the process is complicated and requires multiple photolithography.
[0003] At present, there are three common methods for making air bridges. One is to use composite glue electroplating to make air bridges, the other is to use photoresist to transfer the required graphics to the sacrificial layer to make air bridges, and the third is to use photosensitive adhesive layer to make air bridges. . The air bridge made by these three methods, the final shape of...