Multispectral photosensitive component

Abstract

The invention relates to a multispectral photosensitive component which comprises multilayer composite photosensitive pixels which adopt a single-face or double-face machining mode, realize up-down placement in a silicic P or N basic layer in two, three or four and respectively induct spectra which are orthogonal or complementary in visible light or visible and infrared light spectra. Basic photosensitive pixels on different levels in the composite photosensitive pixels can be designed to induct different colors or spectra, therefore, a multispectral photosensitive chip is obtained by repeatedly arranging a macro unit comprising more than one composite photosensitive pixel. The multispectral photosensitive component comprises a new design of the multilayer photosensitive pixels and examples thereof used for single-face double-layer, double-face double-layer, double-face three-layer, double-face four-layer, single-face mixed double-layer and double-face mixed double-layer or multilayermultispectral photosensitive components. The multispectral photosensitive component has more favorable colored photosensitive property and colored photosensitive and infrared photosensitive integration and simple machining process.

Description

technical field [0001] The invention relates to a multi-spectrum photosensitive device, in particular to the physical realization and manufacture of a multi-spectral photosensitive device. More precisely, the present invention relates to a photosensitive device for full-color images that can simultaneously sense multiple spectra (such as visible light and infrared rays) using CCD or CMOS semiconductors. Here, panchromatic refers to the entire spectrum of interest. For ordinary (visible light) photosensitive devices, panchromatic refers to covering the entire visible spectrum of red, green, blue and white. For photosensitive devices that combine infrared and color, panchromatic refers to the visible spectrum and the infrared spectrum. The invention is applicable to multi-spectral photosensitive devices including infrared, black and white and color images. Background technique [0002] The present invention is a continuation of "Multi-spectral photosensitive device and its ...

AI Technical Summary

Problems solved by technology

Although Foveon's X3 three-layer photosensitive technology uses depth to achieve color selection, eliminating the need for filter films, but the production of three-layer photosensitive technology is already very difficult and the industrialization situation is not good. If an infrared layer is added below, then , the situation will only become more complicated, so it is difficult to have practical value

The second reason is that silicon, which is commonly used in semiconductors, usually only absorbs infrared light at wavelengths below 1100 nanometers.

These materials are not suitable for use in visible light

The third is the lack of practical double-layer or multi-layer photosensitive device manufacturing technology

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