Gate driving circuit

A gate drive circuit and circuit technology, used in electrical components, electronic switches, and adjusting electrical variables, etc., can solve the problems of slow rise of constant current, deviation of conduction loss, inability to thermal design, etc., to achieve reduction of raw materials, efficient thermal Design and effect of suppressing variation in conduction loss

Inactive Publication Date: 2010-08-25
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the conventional gate drive circuit, there is a limitation in the rising speed of the constant current circuit when the insulated gate transistor is turned on, so the current at the gate terminal cannot be immediately become a constant value
In addition, in the current value switching of the constant current circuit, a switch is used in series with the constant current circuit, and the constant current circuit must increase the current to a predetermined current value from a non-operating state, so the rise of the constant current may be slow.
Therefore, if the threshold voltage (VGEth) of the gate terminal varies, the conduction loss will vary, so there is a problem that thermal design with a large margin is necessary, and efficient thermal design cannot be performed.

Method used

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Embodiment approach 1

[0027] FIG. 1 is a circuit diagram of a gate drive circuit according to Embodiment 1 of the present invention. As the semiconductor element 1 for power, an IGBT1 (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) is used. However, not limited to IGBTs, even if they are composed of other switches such as FET (Field Effect Transistor) or switches using not only silicon but also other materials such as silicon carbide (SiC) and gallium nitride (GaN), the same The effect is self-evident. The combination of IGBT1, diode 2, and gate drive circuit 29 described here can be used in various power converters such as the three-phase inverter circuit shown in FIG. 2 .

[0028] In FIG. 2 , 1a to 1f denote power semiconductor devices (IGBTs), 2a to 2f denote diodes, and 30a to 30f denote gate drive circuits. The gate drive circuits 30a to 30f control the switching of the power semiconductor elements 1a to 1f with respect to the current obtained from the AC power supply ...

Embodiment approach 2

[0046] 6 is a circuit diagram showing a gate drive circuit according to Embodiment 2 of the present invention. In FIG. 6 , the same or corresponding parts as those of the above-described embodiment are denoted by the same or related symbols, and description thereof will be omitted. In the gate drive circuit 29a of FIG. 6, the preliminary energization circuit 19a is connected to the gate terminal of the IGBT1, and the preliminary energization circuit 19a is composed of an N-channel type MOSFET 17a as a second switch that controls the current to the gate terminal of the IGBT1. and resistor 18a. The drain of N-channel MOSFET 17a is connected to the gate terminal of IGBT1 via resistor 18a, the gate is connected to drive control unit 20, and the source is connected to the ground side.

[0047] FIG. 7 is a timing chart for explaining the operation of the circuit in FIG. 6 . (a) of FIG. 7 shows the control command signal Sa, (b) shows the control command signal Sb, (c) shows the co...

Embodiment approach 3

[0053] 8 is a circuit diagram of a gate drive circuit according to Embodiment 3 of the present invention. In FIG. 8 , the same or corresponding parts as those in the above-described embodiment are denoted by the same or related symbols, and description thereof will be omitted. In the gate drive circuit 29 b of FIG. 8 , the constant current circuit 16 a is normally set to a small current, and is set to a large current only when necessary. Therefore, a resistor 23 is connected in series with the setting resistor 13 for setting the constant current value of the constant current circuit 16a, and a switch 24 for short-circuiting both ends of the resistor 23 is connected in parallel with the resistor 23. Furthermore, comparators 22 and 26 are provided, and the comparators 22 and 26 are connected to the gate terminal of the IGBT 1 and compare the gate voltage with a preset voltage.

[0054] The first reference power source 21 that generates the first reference voltage and the compar...

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Abstract

Provided is a gate driving circuit wherein start-up of a constant current in a constant current circuit is quick and power is saved. The gate driving circuit is provided with a constant current driving circuit (28) for supplying the constant current; a gate terminal of a power semiconductor element (1) connected to an output terminal of the constant current driving circuit; a comparator (22), which compares the voltage of the gate terminal with a prescribed set voltage value, and outputs a signal indicating that the voltage of the gate terminal is higher than the set voltage value; and a drive control section (20) which increases the current of the constant current driving circuit by receiving a signal which turns on the power semiconductor element, and reduces the current of the constantcurrent driving circuit by receiving the signal from the comparator.

Description

technical field [0001] The present invention relates to a gate drive circuit for driving power semiconductor elements. Background technique [0002] In a conventional gate drive circuit of a power semiconductor element in a load driving device, a constant current circuit and a current mirror circuit are used to drive a constant current through a gate terminal in order to drive an insulated gate transistor. In addition, in order to switch the current value of the constant current circuit, a switch is used in series with the constant current circuit (for example, refer to Patent Document 1). [0003] Patent Document 1: Japanese Patent Application Laid-Open No. 2003-318713 (Fig. 1) [0004] In the conventional gate drive circuit, when the insulated gate transistor is turned on, the rising speed of the constant current circuit is limited, so the current at the gate terminal cannot immediately become a constant value. In addition, in switching the current value of the constant ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08
CPCH03K17/0412H03K17/162H03K17/0406H02M1/08H03K2217/0036G05F3/26
Inventor 中武浩福优奥田达也角田义一
Owner MITSUBISHI ELECTRIC CORP
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