Homeotropic alignment type pixel structure and manufacturing method thereof

Abstract

The invention relates to a homeotropic alignment type pixel structure and a manufacturing method thereof. The pixel structure comprises a gate, a gate insulation layer, a gate amorphous silicon area, a source metal area, a drain metal area, an organic matter protective layer, a conducting layer and slits, wherein the gate is formed on a base plate; the gate insulation layer covers on the gate; the gate amorphous silicon area is formed on the gate insulation layer and is correspondingly positioned above the gate; the source metal area and the drain metal area are formed on the gate amorphous silicon area; the organic matter protective layer is formed on the gate insulation layer and covers on the source metal area and the drain metal area and comprises a dielectric layer hole and a plurality of bulges, and the dielectric layer hole exposes the partial surface of the drain metal area; the conducting layer is formed on the organic matter protective layer and covers on the dielectric layer hole; and the slits are formed among the bulges. The invention prevents from forming the bulges on an amorphous silicon layer as a base by forming the bulges on the organic matter protective layer, thereby reducing the light leakage current garneted by a thin film transistor.

Description

technical field [0001] The present invention relates to a vertical alignment pixel structure and a manufacturing method thereof, in particular to a vertical alignment pixel structure capable of reducing light leakage current and a manufacturing method thereof. Background technique [0002] The multimedia technology in today's society is quite developed, mostly benefiting from the progress of semiconductor components and display devices. As far as displays are concerned, liquid crystal displays with superior characteristics such as high image quality, good space utilization efficiency, low power consumption, and no radiation have gradually become the mainstream of the market. In order to make LCDs have better display quality, current LCDs are developing towards the characteristics of high contrast, no gray scale inversion, small color cast, high brightness, high color saturation, fast response and wide viewing angle. In terms of wide viewing angle technologies, common ones i...

AI Technical Summary

Problems solved by technology

As we all know, in the liquid crystal pixel structure, the amorphous silicon layer is a kind of photosensitive material, which will generate light leakage current after being irradiated with light. Since the protrusion needs a certain height in the vertically aligned pixel structure, it will correspondingly cause the gate of the thin film transistor to The increase of the thickness of the amorphous silicon region 14 will easily cause the light leakage current of the thin film transistor, and then cause adverse effects on the electrical properties of the pixel.

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