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Semiconductor structure and forming method thereof

A semiconductor and side wall technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., to achieve the effect of easy formation

Active Publication Date: 2012-05-09
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to at least solve one of the above-mentioned technical defects, especially solve the problem caused by the height difference between the gate and the source / drain to the formation of the contact hole

Method used

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  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Such as figure 2 As shown in FIG. 1 , it is a schematic diagram of a semiconductor structure with raised portions on the source / drain according to Embodiment 1 of the present invention. It should be noted that, in this embodiment, the CMOS structure is used as an example for description, but this embodiment and all the following embodiments are not limited to the CMOS structure, and other structures can also be applied to various embodiments of the present invention, which will not be repeated here. List them all. The semiconductor structure includes a substrate 1100, a gate 100 formed on the substrate 1100, and a source and a drain 200 formed in the substrate 1100 and located on both sides of the gate 100, and further comprising The lifting part 300 above the drain 200, the height of the lifting part 300 can be close to the height of the gate 200, in an embodiment of the present invention, the height of the lifting part 300 is slightly lower than the height of the ga...

Embodiment 2

[0038] Such as image 3As shown, it is a schematic diagram of a semiconductor structure with raised portions on the source / drain according to Embodiment 2 of the present invention. Different from Embodiment 1, in this embodiment, a groove is formed on the gate 100, and the groove is composed of the gate 100 and the first sidewall 400 higher than the gate 100, the second sidewall 500 and the third side wall 600, the height difference between the gate and the source / drain can be effectively reduced through the groove, and better stress characteristics can also be provided through the groove.

Embodiment 3

[0040] Such as Figure 4 As shown, it is a schematic diagram of a semiconductor structure with raised portions on the source / drain according to Embodiment 3 of the present invention. In this embodiment, on the basis of the second embodiment, a small sidewall is formed on the basis of the groove on the gate 100, specifically, a fourth sidewall is formed on the first sidewall 400 inside the groove. 700. In this embodiment, a fifth side wall 800 may be formed on the outside of the groove, on the third side wall 600 , and the fifth side wall 800 partly covers the metal silicide layer 1000 on the lifting portion 300 . In one embodiment of the present invention, the fourth sidewall 700 and the fifth sidewall 800 include oxide. In this embodiment, the material of the fourth sidewall 700 and the fifth sidewall 800 is different from that of the deposited nitride for etching selectivity, so that the contact hole can be formed by a self-alignment process. In another embodiment of the ...

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Abstract

The invention provides a semiconductor structure. The semiconductor structure comprises a grid, a source, a drain, lifting parts, metal silicide layers and contact holes, wherein the grid is formed on a substrate; the source and the drain are formed in the substrate and are arranged on both sides of the grid; the lifting parts are respectively formed on the source and the drain, and the height thereof is approximate to the height of the grid; and the metal silicide layers and the contact holes are formed on the lifting parts and the grid. By additionally forming the lifting parts on the source / drain, the invention can decrease the height difference between the grid and the source / drain, and is easy to form the contact holes.

Description

technical field [0001] The present invention relates to the field of semiconductor design and manufacturing technology, in particular to a semiconductor structure with raised source / drain (rasied S / D), and a method for forming the semiconductor structure Background technique [0002] With the continuous development of semiconductor technology, the feature size of CMOS (Complementary Metal Oxide Semiconductor) devices has been continuously reduced, which has caused a series of problems such as short channel effect and connection. These problems have become the bottleneck hindering the development of semiconductor technology. In particular, as feature sizes continue to decrease, it becomes more and more difficult to make contact holes for connecting gates and source / drains. Such as figure 1 As shown, it is a structural diagram of a CMOS device formed by an existing method. It can be seen from the figure that since there is a height difference between the gate and the source / d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/092H01L29/78H01L29/423H01L21/8238H01L21/336H01L21/28H01L21/768
CPCH01L29/66545H01L21/823807H01L21/823814H01L29/7834H01L29/66628H01L21/823864H01L29/6656H01L29/665H01L21/823443
Inventor 骆志炯尹海洲朱慧珑
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI