Semiconductor device and method for manufacturing the same

Abstract

Disclosed is a semiconductor device comprising a first semiconductor layer (1), a second semiconductor layer (4) formed on the first semiconductor layer (1), a third semiconductor layer (5) formed in the form of islands on the second semiconductor layer (4), an insulating film (7) formed on the second semiconductor layer (4) and the third semiconductor layer (5), a control electrode (21) formed on the insulating film (7), a first main electrode (22) electrically connected with the second semiconductor layer (4) and the third semiconductor layer (5), and a second main electrode (23) electrically connected with the first semiconductor layer (1) and containing Pd. A method for manufacturing the semiconductor device is also disclosed.

Description

technical field [0001] The present invention relates to a semiconductor device as an insulated gate type semiconductor element and a method of manufacturing the same. Background technique [0002] The insulated gate bipolar transistor is called IGBT (Insulated Gate Bipolar Transistor), which can simultaneously realize the high-speed operation of the metal oxide semiconductor field effect transistor (MOSFET, Metal Oxide Semiconductor Field Effect Transistor) and the low on-state voltage of the bipolar transistor. power semiconductor components. [0003] Figure 6 It is a side sectional view showing a penetration type IGBT having a conventional trench structure. The IGBT has a semiconductor layer 10 composed of a p+-type collector layer 1, an n+-type buffer layer 2, an n-type drift layer 3, a p-type base layer 4, and an n+-type emitter layer 5, and further has: formed from the semiconductor layer 10 The main surface 11 of the main surface 11 reaches the groove 6 inside the d...

AI Technical Summary

Problems solved by technology

According to this method, although the latch-up effect can be prevented by reducing the hole current, it is difficult to obtain a good contact between the collector layer 1 with a low impurity concentration and the collector electrode 23a, that is, an ohmic contact, and a Schottky electrode can be easily formed. touch

As a result, such as Figure 7 As shown, while causing a high on-state voltage to occur, an unstable operation in which the output voltage VCE is not proportional to the output current IC occurs at start-up

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