Coaxial transistor structure
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- 杨春足
- Publication Date
- 2010-06-09
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Abstract
Description
technical field
[0001] The present invention relates to a coaxial transistor structure (Coaxial-Transistor), in particular to a coaxial structure metal-oxide layer-semiconductor field effect transistor used to improve integrated circuit integration (Integration), and its completely symmetrical Coaxial transistor structure in complementary metal-oxide-semiconductor field-effect transistor technology. Background technique
[0002] Transistor "Transistor" originated from Transfer-Resistor, which originally meant "the one who mobilizes the resistor; the one who moves or transfers the resistor", and the free translation is "adjusting the resistance body". Transistors have clearly demonstrated their superior bipolar junction transistor (BipolarJunction Transistor, referred to as BJT) function of "adjusting the size of the built-in resistance (Build inResistor) to make the passing current large or small" in the existing known electronic technology field. ; or in the existing known...