Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Coaxial transistor structure

A technology of transistors and field effect transistors, applied in the field of coaxial transistor structures, can solve problems such as inconvenience and lack of suitable structures for general products

Active Publication Date: 2010-06-09
杨春足
View PDF1 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] It can be seen that the above-mentioned existing transistor structure obviously still has inconvenience and defects in structure and use, and needs to be further improved urgently.
In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but for a long time no suitable design has been developed, and the general product has no suitable structure to solve the above-mentioned problems. This is obviously the relevant industry. Urgent problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Coaxial transistor structure
  • Coaxial transistor structure
  • Coaxial transistor structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0045] Inverter composed of CCMOSFET coaxial complementary metal oxide half field effect transistor.

[0046] see Figure 7 As shown, it is an inverter integrated circuit composed of coaxial complementary metal-oxide-semiconductor field-effect transistors. Each inverter is a CPMOS in Figure 3-1 upside down and a CNMOS in Figure 3-2 on the bottom. A CCMOS structure is formed to realize the function of an inverting circuit. The upper output end 701 and the lower output end 702 can be formed by connecting the two axial conductors 309 , 319 up and down in series. The shared gate forms a voltage input control terminal 703 . Each CCMOS is a coaxial inverter formed by connecting two axial conductors 309 and 319 in series up and down and sharing a gate. Each inverter is isolated by an isolation layer 706 . When the input control terminal 703 of each inverter inputs a low voltage level, the low voltage of the common gate induces the P channel of the CPMOS on it to turn on the curre...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a coaxial transistor structure and discloses a coaxial transistor on a basal plate, in particular to a metal-oxide-semiconductor field-effect transistor with a coaxial structure, and stack chips or basal plates (Wafer Bonding) and axes through holes can be permeated and connected to be manufactured into a coaxial full-symmetry complementary metal-oxide-semiconductor field-effect transistor integrated circuit with higher integration but without latch-up effect. The invention can thoroughly avoid the latch-up effect and can increase the integration and response speed by adopting methods that the conventional PMOS is manufactured into a CPMOS with the coaxial structure, the conventional NMOS is manufactured into a CNMOS with the coaxial structure and then the CPMOS and the CNMOS are turned upside down to be jointed and manufactured into the full-symmetry complementary coaxial metal-oxide-semiconductor field-effect transistor CCMOS structure.

Description

technical field [0001] The present invention relates to a coaxial transistor structure (Coaxial-Transistor), in particular to a coaxial structure metal-oxide layer-semiconductor field effect transistor used to improve integrated circuit integration (Integration), and its completely symmetrical Coaxial transistor structure in complementary metal-oxide-semiconductor field-effect transistor technology. Background technique [0002] Transistor "Transistor" originated from Transfer-Resistor, which originally meant "the one who mobilizes the resistor; the one who moves or transfers the resistor", and the free translation is "adjusting the resistance body". Transistors have clearly demonstrated their superior bipolar junction transistor (BipolarJunction Transistor, referred to as BJT) function of "adjusting the size of the built-in resistance (Build inResistor) to make the passing current large or small" in the existing known electronic technology field. ; or in the existing known...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L29/41H01L27/092H03K19/0948H03K19/20
Inventor 杨春足
Owner 杨春足
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com