Coaxial transistor structure

A technology of transistors and field effect transistors, applied in the field of coaxial transistor structures, can solve problems such as inconvenience and lack of suitable structures for general products
CN101728431AActive Publication Date: 2010-06-09杨春足

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
杨春足
Publication Date
2010-06-09

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Abstract

The invention relates to a coaxial transistor structure and discloses a coaxial transistor on a basal plate, in particular to a metal-oxide-semiconductor field-effect transistor with a coaxial structure, and stack chips or basal plates (Wafer Bonding) and axes through holes can be permeated and connected to be manufactured into a coaxial full-symmetry complementary metal-oxide-semiconductor field-effect transistor integrated circuit with higher integration but without latch-up effect. The invention can thoroughly avoid the latch-up effect and can increase the integration and response speed by adopting methods that the conventional PMOS is manufactured into a CPMOS with the coaxial structure, the conventional NMOS is manufactured into a CNMOS with the coaxial structure and then the CPMOS and the CNMOS are turned upside down to be jointed and manufactured into the full-symmetry complementary coaxial metal-oxide-semiconductor field-effect transistor CCMOS structure.
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Description

technical field

[0001] The present invention relates to a coaxial transistor structure (Coaxial-Transistor), in particular to a coaxial structure metal-oxide layer-semiconductor field effect transistor used to improve integrated circuit integration (Integration), and its completely symmetrical Coaxial transistor structure in complementary metal-oxide-semiconductor field-effect transistor technology. Background technique

[0002] Transistor "Transistor" originated from Transfer-Resistor, which originally meant "the one who mobilizes the resistor; the one who moves or transfers the resistor", and the free translation is "adjusting the resistance body". Transistors have clearly demonstrated their superior bipolar junction transistor (BipolarJunction Transistor, referred to as BJT) function of "adjusting the size of the built-in resistance (Build inResistor) to make the passing current large or small" in the existing known electronic technology field. ; or in the existing known...

Claims

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