Static random access memory and method for manufacturing the same

Abstract

Disclosed is a static random access memory (SRAM), which includes first and second access transistors composed of metal oxide semiconductor (MOS) transistors, first and second drive transistors composed of MOS transistors, and first and second p-channel thin film transistors (TFTs) used as pull-up devices. The SRAM includes a ground potential layer disposed as a common source of the first and second drive transistors, and formed by implanting a dopant into a semiconductor substrate, a power supply potential layer connected with sources of the first and second p-channel TFTs, and an insulating layer formed on the substrate and interposed between the ground potential layer and the power supply potential layer.

Description

Technical field [0001] The present invention relates to a static random access memory (Random Access Memory, hereinafter referred to as SRAM) and a method for manufacturing the memory. Background technique [0002] Static random access memory (SRAM) is a storage device that can store data in a circuit using a latch manner. The SRAM device has high operating speed and low power consumption, and is different from dynamic random access memory (DRAM) in that it does not need to update the stored information regularly. [0003] Generally, SRAM includes two pull-down devices, two access devices, and two pull-up devices. The SRAM is divided into three types according to the structure of pull-down devices: fully complementary Complementary Metal-Oxide Semiconductor (CMOS) type, high load resistor (HLR) type, and thin film transistor (TFT) type. The full CMOS type SRAM uses a p-channel bulk metal oxide semiconductor field effect transistor (MOSFET) as a pull-down device. The HLR type SRAM...

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Problems solved by technology

Also, the full CMOS type SRAM uses p-channel TFTs to increase the integration of memory cells due to its larger area

However, due to the high resistance of the power supply potential layer Vcc, the full CMOS type SRAM operates at a lower speed

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