Static random access memory and method for manufacturing the same

A static random access and memory technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., and can solve the problems of increasing the integration of memory cells and low running speed of all CMOS SRAMs
CN1992281AInactive Publication Date: 2007-07-04DONGBU ELECTRONICS CO LTD
0 Cites 4 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
DONGBU ELECTRONICS CO LTD
Publication Date
2007-07-04
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

Disclosed is a static random access memory (SRAM), which includes first and second access transistors composed of metal oxide semiconductor (MOS) transistors, first and second drive transistors composed of MOS transistors, and first and second p-channel thin film transistors (TFTs) used as pull-up devices. The SRAM includes a ground potential layer disposed as a common source of the first and second drive transistors, and formed by implanting a dopant into a semiconductor substrate, a power supply potential layer connected with sources of the first and second p-channel TFTs, and an insulating layer formed on the substrate and interposed between the ground potential layer and the power supply potential layer.
Need to check novelty before this filing date? Find Prior Art

Description

Technical field

[0001] The present invention relates to a static random access memory (Random Access Memory, hereinafter referred to as SRAM) and a method for manufacturing the memory. Background technique

[0002] Static random access memory (SRAM) is a storage device that can store data in a circuit using a latch manner. The SRAM device has high operating speed and low power consumption, and is different from dynamic random access memory (DRAM) in that it does not need to update the stored information regularly.

[0003] Generally, SRAM includes two pull-down devices, two access devices, and two pull-up devices. The SRAM is divided into three types according to the structure of pull-down devices: fully complementary Complementary Metal-Oxide Semiconductor (CMOS) type, high load resistor (HLR) type, and thin film transistor (TFT) type. The full CMOS type SRAM uses a p-channel bulk metal oxide semiconductor field effect transistor (MOSFET) as a pull-down device. The HLR type SRAM...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More