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Semiconductor device and method of manufacturing semiconductor device

A semiconductor and device technology, applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, transistors, etc., can solve problems such as leakage voltage rise, and achieve the effect of suppressing current

Inactive Publication Date: 2010-09-29
NEC ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

A further increase in the drain voltage induces the usual junction breakdown current 602

Method used

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  • Semiconductor device and method of manufacturing semiconductor device
  • Semiconductor device and method of manufacturing semiconductor device
  • Semiconductor device and method of manufacturing semiconductor device

Examples

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Embodiment Construction

[0034] Now, the present invention will be described herein with reference to exemplary embodiments. Those skilled in the art will recognize that many alternative embodiments can be accomplished using the teachings of the present invention and that the invention is not limited to the embodiments illustrated for explanatory purposes.

[0035] Hereinafter, referring to the drawings, embodiments of the present invention will be described. Note that any similar components in all drawings will be given similar reference numerals or symbols, and descriptions thereof will not be repeated all the time.

[0036] Figure 1A is a sectional view showing the semiconductor device according to the first embodiment; Figure 1B is showing Figure 1A A magnified view of the main part of . The semiconductor device has a device isolation film 120 formed in a semiconductor layer 100 of a first conductivity type, a device formation region 110, a channel formation region 190, a gate insulating fi...

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Abstract

The invention provides a semiconductor device and a method of manufacturing semiconductor device. Second-conductivity-type high dose impurity layers are formed in a device forming region, and function as the source and drain; a second-conductivity-type low dose impurity layer is provided around each of the second-conductivity-type high dose impurity layers so as to expand each second-conductivity-type high dose impurity layer in the depth-wise direction and in the direction of channel length, at least a part of the second-conductivity-type low dose impurity layer is positioned below the gate electrode, and the gate insulting film; and the gate insulating film has, at a portion thereof positioned above the second-conductivity-type low dose impurity layer, a sloped portion which continuously increases in the thickness from the center towards a side face of the gate electrode, without causing an inflection point.

Description

[0001] This patent application is based on Japanese Patent Application No. 2009-076065, the contents of which are incorporated herein by reference. technical field [0002] The present invention relates to a semiconductor device capable of suppressing leakage current due to interband tunneling current and a method of manufacturing such a semiconductor device. Background technique [0003] A possible example of a high voltage MOS transistor is the Figure 6A shown in the sectional view of . The transistor is formed in the semiconductor layer 500 of the first conductivity type, and has a gate insulating film 530, a gate electrode 540, a high-dose impurity layer 570 of the second conductivity type serving as a source or a drain, and a low-dose impurity layer of the second conductivity type. impurity layer 560 . A gate insulating film 530 and a gate electrode 540 are provided over the channel formation region 502 . The second conductive type low-dose impurity layer 560 is form...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423H01L29/06H01L21/336H01L21/28
CPCH01L29/42368H01L29/66568H01L29/7836
Inventor 吉田浩介
Owner NEC ELECTRONICS CORP
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