Plasma apparatus
A plasma and gas technology, applied in the field of plasma devices, can solve the problems of the influence of the manufacturing cost of the display device, the increased area of the mother glass, and the large scale of the manufacturing device, so as to shorten the processing time of the substrate, reduce the usage amount, and suppress the equipment. effect of investment
Inactive Publication Date: 2010-09-29
SEMICON ENERGY LAB CO LTD
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Problems solved by technology
Therefore, it not only affects the manufacturing cost of display devices and the like using the semiconductor devices manufactured in this way, but also causes an increase in environmental burden.
[0007] In addition, as the size of the display screen increases, the area of the mother glass increases, and vacuum devices such as vacuum chambers and vacuum pumps also increase in size accordingly. The scale of the manufacturing equipment is very large.
In addition, the price of the device is also high, requiring a larger investment in equipment
Method used
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[0060] Embodiments of the present invention will be described in detail below with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that various changes can be made in its configuration and details without departing from the spirit and scope of the present invention. Therefore, the present invention is not limited to the interpretation given by the contents described in the embodiments described below.
[0061] (Embodiment 1)
[0062] use below figure 1 , figure 2 (A), Figure 3 to Figure 7 Embodiments of the present invention will be described.
[0063] figure 1 Shown is a method of forming wiring using a solution jetting unit of the present invention. The solution spraying unit 103 moves above the substrate 101 to spray a solution onto the substrate 101 to form the wiring pattern 102 .
[0064] figure 2 (A) shows a method of etching using a plasma generatin...
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A method for manufacturing a semiconductor device comprises a step wherein wiring is formed by using a first solution jet means which sprays a conductive material, a step wherein a resist mask is formed on the wiring by using a second solution jet means, and a step wherein the wiring is etched by using an atmospheric pressure plasma apparatus having a linear plasma generating means or an atmospheric pressure plasma apparatus having a plurality of plasma generating means arranged linearly while using the resist mask as a mask.
Description
[0001] This application is a divisional application of the invention patent application with the application date of January 30, 2004, the application number "200480003254.3 (PCT / JP2004 / 000915)" and the invention title "Method for Manufacturing Semiconductor Device and Display Device" . technical field [0002] The present invention relates to a plasma device, and more particularly to a plasma device for manufacturing a display device using an insulated gate type field effect transistor typified by a thin film transistor (TFT). Background technique [0003] A thin film transistor (TFT) formed using a thin film on an insulating surface is widely used in integrated circuits and the like. Among them, in display panels of thin film display devices represented by liquid crystal televisions, etc., they are often used as switching elements, and their applications are expanding to portable terminals, large display devices, and the like. [0004] In conventional display devices usin...
Claims
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IPC IPC(8): H05H1/26H01L21/00H01L21/288H01L21/336H01L21/77H01L21/84H01L29/786H10K99/00
CPCH01L51/0017H01L51/56H01L27/3244H01L51/0023H01L27/1214H01L27/283H01L29/66765H01L51/0022H01L21/288H01L29/78669H01L27/1285H01L27/1292H10K19/10H10K71/231H10K59/12H10K71/611H10K71/621H01L21/3213H01L21/28H10K71/00
Inventor 山崎舜平
Owner SEMICON ENERGY LAB CO LTD