Manufacture method of CMOS (Complementary Metal Oxide Semiconductor) image sensor
A technology of image sensor and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, radiation control devices, etc., can solve the problems of high cost, limited area of photodiode active area, etc., and achieve the effect of improving image quality
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[0013] The present invention provides an embodiment of a manufacturing method of a CMOS image sensor such as image 3 shown, including the following steps:
[0014] Step S101, providing a pixel unit layout; the pixel unit layout includes a photodiode active area, a transistor active area, and a transistor gate area;
[0015] Step S102, performing manual optical proximity correction on the transistor gate area of the layout to obtain the pixel unit layout after the gate area is corrected;
[0016] Step S103, optimize the photodiode active area and transistor gate area according to the pixel unit layout after the gate area is corrected, the photodiode active area area of the optimized pixel unit layout is larger than the photodiode of the pixel unit layout Active area area;
[0017] Step S104, preparing pixel units according to the optimized pixel unit layout.
[0018] In the above implementation manner, by adopting manual optical proximity correction for the gate region ...
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