Manufacturing method of semiconductor device, semiconductor device, communication device and semiconductor laser

Abstract

A method for manufacturing a semiconductor device including a semiconductor layer and a dielectric layer stacked thereon in a structure, comprising: a semiconductor layer forming step, forming a semiconductor layer; a surface treatment step, for the semiconductor layer formed in the semiconductor layer forming step The surface of the layer is subjected to surface treatment for removing residual carbon compounds; a dielectric film forming step of performing at least a part of the surface of the semiconductor layer surface-treated in the surface treatment step to correspond to the surface after the surface treatment The stacking condition of the state is to form a dielectric film; and the heat treatment step is to change the crystallization state of at least a part of the semiconductor layer by performing heat treatment on the semiconductor layer on which the dielectric film is formed in the dielectric film forming step. Accordingly, the role of the dielectric film can be fully exerted.

Description

technical field [0001] The present invention relates to a manufacturing method of a semiconductor device, a semiconductor device, a communication device and a semiconductor laser. In more detail, the present invention relates to a method of manufacturing a semiconductor device including a semiconductor stacked structure in its structure, a semiconductor device, a communication device, and a semiconductor laser. Background technique [0002] Among semiconductor optical devices, there are optical devices that perform electrical-optical conversion / optical-electrical conversion such as light-emitting devices and optical receiving devices, and optical devices that perform optical signals such as optical waveguides, optical switches, isolators, and photonic crystals. Optical devices for transmission, etc. [0003] Among the optical devices that perform the above-mentioned electro-optic conversion / opto-electric conversion, for light-emitting devices such as semiconductor lasers an...

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Problems solved by technology

As a result, cracks occur on the semiconductor surface on which the dielectric film is formed, and contact resistance increases when electrodes are subsequently formed on the semiconductor surface.

In particular, in the IFVD method that the present invention focuses on, the window region is mixed crystallized. In order to achieve the desired energy band gap, heat treatment at a higher temperature than that used in general heat treatment is required. In some cases, cracks occur in the dielectric layer due to its heat treatment, which severely damages the function of the dielectric layer. As a result, the desired size of the energy band gap cannot be formed, or there is a contact resistance caused by cracks on the surface of the semiconductor layer along with the cracks in the dielectric layer. growing problem

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