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Silicon substrate with period structure

A technology of periodic structure and silicon substrate, applied in microstructure technology, microstructure device, nanostructure manufacturing, etc., can solve the problems of long preparation process time of patterned silicon substrate, poor uniformity of periodic structure, and increased cost of silicon substrate, etc. To achieve the effect of reducing production cost and preparation process time, low cost and improving performance

Inactive Publication Date: 2013-03-06
AUROTEK CORP
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Problems solved by technology

[0008] Although patterning the substrate by wet etching can avoid damage to the substrate and the etching surface is a natural lattice plane; however, if the parameters are not properly controlled during wet etching, the uniformity of the periodic structure will be poor
At the same time, because the lithography preparation process still needs to be carried out in the above-mentioned production process, it still faces the problems of high cost and low production speed.
[0009] Although the cost of wet etching is lower than that of dry etching, the yellow light lithography facilities still cost millions of dollars, which greatly increases the cost of silicon substrates for solar cells; and the preparation process time of each batch of yellow light lithography preparation process is about 30 minutes
[0010] Therefore, patterning the silicon substrate by the above method still faces the disadvantages of long preparation process time and high production cost.

Method used

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Embodiment Construction

[0044] Such as Figure 4A to Figure 4F As shown, this is a schematic diagram of the steps of arranging the nanospheres on the surface of the silicon substrate in a preferred embodiment of the present invention. First, if Figure 4A As shown, a silicon substrate 21 and a colloidal solution 25 located in a container 26 are provided, wherein the colloidal solution 25 is mixed by a plurality of nanospheres (not shown) and a surfactant (not shown) become. Then, place this silicon substrate 21 in the container 26 and make the silicon substrate 21 completely immersed in the colloidal solution 25, as Figure 4B shown. After standing for a few minutes, the nanospheres 22 are gradually and orderly arranged on the surface of the silicon substrate 21, forming a so-called "nanosphere layer", such as Figure 4C shown. Then, a volatile solution 27 is poured into the container 26 to volatilize the aforementioned colloidal solution 25, as Figure 4D shown. Finally, if Figure 4E As sho...

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Abstract

The invention relates to a silicon substrate with a period structure, comprising a silicon substrate and a period structure. The period structure is arranged on the surface of the substrate and provided with a plurality of micro cavities in array arrangement, and each micro cavity is in the shape of an inverted quadrangular pyramid or an inverted truncated cone, wherein the bottom edge length of the inverted quadrangular pyramid is between 100 nm and 2400 nm, the diameter of the inverted truncated cone is between 100 nm and 2400 nm and the depth of each micro cavity is between 100 nm and 2400 nm.

Description

technical field [0001] The invention relates to a silicon substrate with a periodic structure, in particular to a silicon substrate with a periodic structure made of nanospheres, and can be applied to the silicon substrate with a periodic structure for the anti-reflection layer of a silicon crystal solar cell. Background technique [0002] In recent years, as the energy that human beings mainly rely on is gradually exhausted, scientists have invested a lot of energy and money in the development of alternative energy applications, such as solar energy and wind power. Among them, solar cells that can directly convert solar energy into electrical energy have attracted attention from all walks of life. [0003] Today's silicon solar cell manufacturing process such as Figure 1A to Figure 1F. First, if Figure 1A As shown, a silicon substrate 10 is provided, wherein the silicon substrate 10 is a P-type silicon substrate; then the silicon substrate 10 is subjected to a patterning...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/02H01L31/0236H01L31/0216B82B1/00B81B7/04H01L31/18H01L31/20B82B3/00B81C1/00C23F1/24
CPCY02E10/50Y02P70/50
Inventor 李崇华李升儒
Owner AUROTEK CORP
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