Ultralow temperature coefficient band-gap reference circuit based on mixed-mode high-order compensation

Abstract

The invention publishes an ultralow temperature coefficient band-gap reference circuit based on mixed-mode high-order compensation, which comprises a band-gap reference current generating circuit, a feedback control loop, a temperature regulating circuit and an output circuit, wherein the band-gap reference current generating circuit comprises four PMOS (P-channel Metal Oxide Semiconductor) pipes, two NMOS (N-Mental Oxide Semiconductor) pipes, two resistors and two PNP (Plug-and-Play) triodes, the feedback control loop comprises two PMOS pipes, two NMOS pipes and two PNF (Power Noise Filter) triodes, the temperature regulating circuit comprises two NMOS pipes, and the output circuit comprises two PMOS pipes, four resistors and a PNP triode. The circuit has lower temperature coefficient, higher power supply rejection ratio and higher process stability.

Description

technical field [0001] The invention relates to a high-order temperature compensation bandgap reference circuit, in particular to a mixed-mode high-order temperature compensation bandgap reference circuit, which belongs to the technical field of analog circuits. Background technique [0002] The voltage or current reference circuit can provide the system with a voltage or current source that does not vary with temperature and power supply, and the influence and effect of reference accuracy on system performance are becoming more and more significant. Bandgap references are widely used because of their low temperature coefficient, high power supply rejection ratio, and compatibility with traditional CMOS processes. [0003] The existing voltage-mode bandgap reference is within the temperature range of -40°C to 125°C. After the first-order linear compensation, the temperature coefficient can be reduced to within 10ppm / °C, and the high-order temperature compensation can further...

AI Technical Summary

Problems solved by technology

Conventional high-order temperature compensation generally uses the superposition control of multiple compensation currents. Not only is the compensation structure complex, the chip occupies a large area, and the process sensitivity is high, it cannot overcome the influence of process drift on circuit performance. The maximum process of the reference temperature coefficient The drift is dozens of times huge, and its performance and process stability are not even as good as the corresponding first-order linear compensation reference, making it difficult to reflect the practical value of the reference high-order compensation structure

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