Novel IGBT high-pressure series valve controlling and monitoring system
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHINA ELECTRIC POWER RES INST
- Publication Date
- 2013-03-27
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Abstract
Description
technical field
[0001] The invention belongs to the field of power electronics and power systems, and in particular relates to a new IGBT high-voltage series valve control and monitoring system. Background technique
[0002] The semiconductor power switching device that appeared in the mid-1980s - the insulated gate bipolar transistor IGBT (Insulated Gate Biploar Transistor) is a composite device, its input control part is a MOSFET, and the output stage is a bipolar junction transistor. The advantages of MOSFET and power transistor: high input impedance, voltage control, small driving power, fast switching speed, operating frequency up to 10-40kHz, lower saturation voltage, larger voltage and current capacity, and wider safe working area. However, the disadvantage of IGBT is that the voltage and current allowable value of a single IGBT are difficult to increase. In order to apply to high-voltage and high-power fields, the method of connecting IGBTs in series is usually used....