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Semiconductor module

A semiconductor and stress technology, applied in the direction of semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve problems such as stress concentration, and achieve reliable stress deformation, high reliability, and reliable absorption effects

Inactive Publication Date: 2013-04-17
TOYOTA JIDOSHA KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the power module 90 having such a configuration, stress concentration due to a difference in linear expansion rate may occur

Method used

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  • Semiconductor module
  • Semiconductor module
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Embodiment Construction

[0030] Hereinafter, specific embodiments of the present invention will be described in detail with reference to the drawings. In addition, in the following forms, the present invention is applied to an intelligent power module for a hybrid vehicle.

[0031] like figure 1 As shown, the power module 100 of this embodiment includes: a semiconductor element 10 as a heat generating body; a ceramic substrate 20 on which the semiconductor element 10 is mounted; a cooler 30 with a refrigerant flow channel inside; and a stress relaxation layer 45 located on the ceramic substrate 20 Between the cooler 30 and the cooler 30, there is a stress relaxation function for relieving stress deformation caused by the difference in linear expansion coefficient between the two. The power module 100 dissipates heat from the semiconductor element 10 to the cooler 30 via the ceramic substrate 20 and the stress relaxation layer 45 .

[0032] The semiconductor element 10 is an electronic component con...

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Abstract

Provided is a semiconductor module (100) wherein a stress relaxing layer (45) is arranged between a ceramic substrate (20) whereupon a semiconductor elements (10) (IGBT (11), diode (12)) are mounted and a cooling device on the rear side of the ceramic substrate (20), and the ceramic substrate, the cooling device and the stress relaxing layer are integrally formed. Furthermore, the stress relaxing layer (45) is separated into a plurality of separated sections (45A, 45B, 45C, 45D) by two slits (461, 462). Furthermore, the slits (461, 462) are positioned between the semiconductor elements when viewed from the thickness direction of the stress relaxing layer (45) and not in a projection region of the semiconductor element.

Description

technical field [0001] The present invention relates to a semiconductor module assembled by sandwiching a stress relaxation layer between an insulating substrate on which a semiconductor element is mounted and a cooling member. Background technique [0002] In power modules for high withstand voltage and high current that are installed in hybrid vehicles, electric vehicles, etc., semiconductor elements themselves generate a large amount of heat when they operate. Therefore, the automotive power module needs to have a cooling structure with high heat dissipation. [0003] Image 6 An example of a power module equipped with a cooling structure is shown. The power module 90 includes a plurality of semiconductor elements 10 , a ceramic substrate 20 on which the semiconductor elements 10 are mounted, and a cooler 30 having a refrigerant flow path inside. The power module 90 dissipates heat generated from the semiconductor element 10 through the cooler 30 . [0004] In the powe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/07H01L25/18
CPCH01L24/49H01L25/072H01L2924/01078H01L23/473H01L2924/01004H01L2224/48137H01L2924/01012H01L23/3735H01L2224/73265H01L2224/49175H01L2924/13055H01L2924/1305H01L2924/00014H01L2224/32225H01L24/48H01L2924/00H01L2224/45099H01L2224/45015H01L2924/207
Inventor 小川尚纪
Owner TOYOTA JIDOSHA KK