Flash memory erasing-writing method and flash memory
A flash memory, flash memory technology, applied in the direction of memory address/allocation/relocation, input/output to the record carrier, etc., can solve the problem of reducing the working stability and security of the flash memory, reducing the service life of the flash memory, and reducing the erasing efficiency. and other problems to achieve the effect of reducing loss, ensuring stability and safety, and improving efficiency
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[0022] The implementation of the present invention provides a Flash (flash memory) erasing and writing method and a Flash memory, through erasing the Flash memory once, multiple fast writes can be achieved.
[0023] see figure 1 , is the first embodiment of the method for rewriting Flash provided by the present invention. as the picture shows:
[0024] 101. Establish a basic information area to store initial data. After the Flash memory determines the size required for the Flash emulation E2P area, a basic information area will be established according to the size required for the Flash emulation E2P area. The basic information area is the area that stores the initial data of the entire Flash emulation E2P area.
[0025] 102. Establish a memory image area, and store data to be modified in the virtual memory. In order to avoid modifying data by directly erasing and writing in the basic information area, before performing modification operations such as erasing and writing, ...
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