Supercharge Your Innovation With Domain-Expert AI Agents!

Flash memory erasing-writing method and flash memory

A flash memory, flash memory technology, applied in the direction of memory address/allocation/relocation, input/output to the record carrier, etc., can solve the problem of reducing the working stability and security of the flash memory, reducing the service life of the flash memory, and reducing the erasing efficiency. and other problems to achieve the effect of reducing loss, ensuring stability and safety, and improving efficiency

Active Publication Date: 2010-12-08
KONKA GROUP
View PDF4 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Frequent erasing and writing reduces the service life of the flash memory, and erasing the entire Flash emulation E2P area reduces the erasing efficiency, and the erasing and writing time is too long due to the large erasing area, which reduces the working stability and safety of the flash memory

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flash memory erasing-writing method and flash memory
  • Flash memory erasing-writing method and flash memory
  • Flash memory erasing-writing method and flash memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The implementation of the present invention provides a Flash (flash memory) erasing and writing method and a Flash memory, through erasing the Flash memory once, multiple fast writes can be achieved.

[0023] see figure 1 , is the first embodiment of the method for rewriting Flash provided by the present invention. as the picture shows:

[0024] 101. Establish a basic information area to store initial data. After the Flash memory determines the size required for the Flash emulation E2P area, a basic information area will be established according to the size required for the Flash emulation E2P area. The basic information area is the area that stores the initial data of the entire Flash emulation E2P area.

[0025] 102. Establish a memory image area, and store data to be modified in the virtual memory. In order to avoid modifying data by directly erasing and writing in the basic information area, before performing modification operations such as erasing and writing, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention discloses a flash memory erasing-writing method and a flash memory. The flash memory erasing-writing method comprises the following steps of: establishing a base information area to store initial data; establishing a memory mapping area, and storing data to be modified in a virtual memory; and establishing a log area, recording the operation of modifying the data in the memory mapping area, storing the record in a log form, and copying the modified data contents. The flash memory erasing-writing method provided by the embodiment of the invention can perform repeated write-in by establishing the log area for recording the erased data and performing one-time erasing, reduce the loss of equipment, prolong the service life of the equipment, ensure the stability and security when the equipment works and improve the work efficiency of the equipment.

Description

technical field [0001] The invention relates to a flash memory technology, in particular to a method for erasing and writing a flash memory and a flash memory. Background technique [0002] Flash Memory technology, that is, flash memory technology, is widely used in modern life. Flash memory technology is used in electrical appliances and some electronic devices commonly used by people, such as televisions, computers, digital cameras, mobile phones, USB flash drives, and mobile hard drives. [0003] The carrier used by flash memory technology is flash memory. Flash memory is generally used to store program code and data that does not require frequent erasure updates. Generally speaking, the capacity of the flash memory is large, but the service life is short (up to 100,000 erasable times), and the erasing and writing speed is slow (the erasing and writing speed is about 64K / S). In order to optimize the flash memory, people have carried out the technical processing of simu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F12/02G06F12/08G06F3/06
Inventor 彭文剑
Owner KONKA GROUP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More