Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor substrate surface preparation method

A substrate surface, semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as low bonding energy

Inactive Publication Date: 2011-01-19
SOITEC SA
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it can be seen that even with HF treatment only lower bonding energies are obtained in DSB applications and strained silicon layer applications still have defects such as so-called "watermarks"

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor substrate surface preparation method
  • Semiconductor substrate surface preparation method
  • Semiconductor substrate surface preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Figure 1a-1c A first embodiment according to the present invention is illustrated, which is directed to a method of preparing the surface of a semiconductor substrate 1 . The processed substrate can then be used in subsequent fabrication methods.

[0021] First, a semiconductor substrate 1 is provided. The semiconductor substrate 1 can be, for example, a silicon wafer with a (110) or (100) substrate, on which other layers may or may not be provided, such as a silicon-germanium buffer layer and / or a silicon-germanium relaxation layer (usually made of Silicon substrates used to grow strained silicon layers (initial substrates).

[0022] The semiconductor substrate 1 has a semiconductor base 3 and its surface is covered with a native oxide layer 5 .

[0023] Figure 1b A modified semiconductor substrate 1' is illustrated, as a result of step a) according to claim 1, the semiconductor substrate is placed in an oxidizing environment 8 in order to change the natural oxide...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for preparing a surface of a semiconductor substrate comprising the steps of oxidizing the surface of the semiconductor substrate to thereby transform the natural oxide into an artificial oxide and of removing the artificial oxide, in particular to obtain an oxide-free substrate surface.

Description

technical field [0001] The present invention relates to a method of preparing a surface of a semiconductor substrate, and more particularly to a method of providing an oxide-free surface of a semiconductor substrate. Background technique [0002] For some applications it is necessary to provide the semiconductor substrate from which the native oxide layer has been removed. One such case arises, for example, in the so-called Direct Silicon Bonding (DSB) technique, where typically the (100) silicon surface of a first substrate is bonded directly to the (110) silicon surface without intervening oxide layers. In order to be able to successfully bond these two substrates, it is important to remove all possible sources of oxygen or oxides at the bonding interface to prevent oxide or oxygen deposits that would limit the quality of the obtained DSB substrates. For example, the presence of such oxygen precipitates or oxides on the bonding surface will cause low bonding energy, resu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/306H01L21/762
CPCH01L21/02046H01L21/76254H01L21/02052
Inventor 拉德万·哈里德
Owner SOITEC SA