High-resistance value metal oxide film resistor and manufacture method thereof

A production method and oxide film technology, applied in non-adjustable metal resistors, resistance manufacturing, resistors, etc., can solve problems such as difficult to reach high resistance values, and achieve high precision, stable performance, and large adjustable range.

Inactive Publication Date: 2011-04-13
GUANGDONG FULLDE ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The object of the present invention is to overcome the defect that the existing above-mentioned resistor and its manufacturing process are dif

Method used

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  • High-resistance value metal oxide film resistor and manufacture method thereof
  • High-resistance value metal oxide film resistor and manufacture method thereof

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0018] Example 1

[0019] First, the basic components are prepared according to the following weight ratio: Si: 35%, Cr: 50%, Ni: 15%, that is, the total amount of the basic components is 100%, and then 0.1% of the total amount of rare earth elements of the substrate is added to the basic components Re to make a good target;

[0020] Then, the prepared target material is sputtered on the surface of the ceramic substrate by a vacuum DC sputtering process to form an inner layer film. The sputtering condition is: vacuum degree 2×10 -3 Pa, sputtering power 200W, duration 200 minutes;

[0021] Then, the same target material is sputtered by radio frequency sputtering process on the ceramic substrate with the inner layer film formed, and the outer layer film is formed on the inner layer film. The sputtering conditions are: argon and oxygen mixed gas atmosphere, pressure 1×10 -3 Pa, sputtering power is 400W, duration is 20 minutes, and the volume ratio of argon to oxygen is 9:1;

[0022] The...

Example Embodiment

[0024] Example 2

[0025] First, the basic components are prepared according to the following weight ratios: Si: 72%, Cr: 25%, Ni: 3%, that is, the total amount of the basic components is 100%, and then 3% of the total amount of rare earth elements of the substrate is added to the basic components Re to make a good target;

[0026] Then, the prepared target material is sputtered on the surface of the ceramic substrate by a vacuum DC sputtering process to form an inner coating. The sputtering conditions are: vacuum degree 5×10 -3 Pa, sputtering power 500W, duration 20 minutes;

[0027] Then, the same target material is sputtered by radio frequency sputtering process on the ceramic substrate with the inner layer film formed, and the outer layer film is formed on the inner layer film. The sputtering conditions are: argon and oxygen mixed gas atmosphere, pressure 3×10 -3 Pa, sputtering power is 600W, duration is 10 minutes, and the volume ratio of argon to oxygen is 9:1;

[0028] Then, h...

Example Embodiment

[0030] Example 3

[0031] First, the basic ingredients are prepared according to the following weight ratio: Si: 48%, Cr: 50%, Ni: 2%, that is, the total amount of the basic ingredients is 100%, and then 2% of the total amount of rare earth elements of the base is added to the basic ingredients Re to make a good target;

[0032] Then, the prepared target material is sputtered on the surface of the ceramic substrate by a vacuum DC sputtering process to form an inner layer film. The sputtering condition is: vacuum degree 4×10 -3 Pa, sputtering power 400W, duration 100 minutes;

[0033] Then, the same target material is sputtered by radio frequency sputtering process on the ceramic substrate with the inner layer film formed, and the outer layer film is formed on the inner layer film. The sputtering conditions are: argon and oxygen mixed gas atmosphere, pressure 2×10 -3 Pa, sputtering power is 500W, duration is 15 minutes, and the volume ratio of argon to oxygen is 9:1;

[0034] Then, he...

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Abstract

The invention relates to the technical fields of electronic components and semiconductors, in particular to a high-resistance value metal oxide film resistor and a manufacture method thereof. The high-resistance value metal oxide film resistor comprises a ceramic matrix, a skin membrane, iron caps and a lead, wherein the skin membrane is formed on the ceramic matrix; the iron caps are positioned in both ends of the ceramic matrix; the skin membrane comprises an inner-layer skin membrane and an outer-layer skin membrane; the inner-layer skin membrane is formed by a target material through vacuum direct current sputtering; and the outer-layer skin membrane is formed by a target material through an ion power supply and radio-frequency sputtering. In the invention, a unique double-layer membrane structure resistor body is manufactured, and the outer-layer skin membrane is a layer of dense metal oxide film actually, has favorable protecting effect on the inner-layer skin membrane and prevents the inner-layer skin membrane from being further oxidized; meanwhile, a parallel connection relation is formed between the inner-layer skin membrane and the outer-layer skin membrane so that a resistance value of the resistor obtains a larger adjustable range; and accordingly, the metal oxide film resistor manufactured by the invention has the advantages of stable performance and high precision, and the resistance value can beyond 100Kohm and is as high as 3.9 megohm.

Description

Technical field: [0001] The invention relates to the technical field of electronic components and semiconductors, in particular to a high-resistance metal oxide film resistor and a manufacturing method thereof. Background technique: [0002] In the electronic industry and semiconductor industry, due to the improvement of device integration and the miniaturization and miniaturization of devices, the high resistance value of components has become an important indicator to replace high-power resistors. The existing technology can only produce products below 100KΩ, "China Applicable technical achievement 93207077" reported the production and performance of a new type of small metal oxide film resistor. Small size requirements for power. Invention content: [0003] The object of the present invention is to overcome the defect that the above-mentioned resistor and its manufacturing process are difficult to achieve high resistance value, and provide a metal oxide film resistor w...

Claims

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Application Information

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IPC IPC(8): H01C7/18H01C17/00H01C17/12
Inventor 李稳根温启源何刚
Owner GUANGDONG FULLDE ELECTRONICS
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