High-resistance value metal oxide film resistor and manufacture method thereof

A production method and oxide film technology, applied in non-adjustable metal resistors, resistance manufacturing, resistors, etc., can solve problems such as difficult to reach high resistance values, and achieve high precision, stable performance, and large adjustable range.
CN102013294AInactive Publication Date: 2011-04-13GUANGDONG FULLDE ELECTRONICS
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
GUANGDONG FULLDE ELECTRONICS
Publication Date
2011-04-13
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to the technical fields of electronic components and semiconductors, in particular to a high-resistance value metal oxide film resistor and a manufacture method thereof. The high-resistance value metal oxide film resistor comprises a ceramic matrix, a skin membrane, iron caps and a lead, wherein the skin membrane is formed on the ceramic matrix; the iron caps are positioned in both ends of the ceramic matrix; the skin membrane comprises an inner-layer skin membrane and an outer-layer skin membrane; the inner-layer skin membrane is formed by a target material through vacuum direct current sputtering; and the outer-layer skin membrane is formed by a target material through an ion power supply and radio-frequency sputtering. In the invention, a unique double-layer membrane structure resistor body is manufactured, and the outer-layer skin membrane is a layer of dense metal oxide film actually, has favorable protecting effect on the inner-layer skin membrane and prevents the inner-layer skin membrane from being further oxidized; meanwhile, a parallel connection relation is formed between the inner-layer skin membrane and the outer-layer skin membrane so that a resistance value of the resistor obtains a larger adjustable range; and accordingly, the metal oxide film resistor manufactured by the invention has the advantages of stable performance and high precision, and the resistance value can beyond 100Kohm and is as high as 3.9 megohm.
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Description

Technical field:

[0001] The invention relates to the technical field of electronic components and semiconductors, in particular to a high-resistance metal oxide film resistor and a manufacturing method thereof. Background technique:

[0002] In the electronic industry and semiconductor industry, due to the improvement of device integration and the miniaturization and miniaturization of devices, the high resistance value of components has become an important indicator to replace high-power resistors. The existing technology can only produce products below 100KΩ, "China Applicable technical achievement 93207077" reported the production and performance of a new type of small metal oxide film resistor. Small size requirements for power. Invention content:

[0003] The object of the present invention is to overcome the defect that the above-mentioned resistor and its manufacturing process are difficult to achieve high resistance value, and provide a metal oxide film resistor w...

Claims

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