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TFT-LCD array substrate and manufacture method thereof

An array substrate and gate line technology, applied in the field of TFT-LCD array substrate and its manufacturing, can solve the problems of over-etching or incomplete etching in the TFT channel area, so as to ensure product quality, increase storage capacitance, and increase yield Effect

Active Publication Date: 2011-04-20
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a TFT-LCD array substrate and its manufacturing method, which can not only effectively increase the storage capacitance per unit area, but also overcome the defects of over-etching or incomplete etching in the existing TFT channel region

Method used

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  • TFT-LCD array substrate and manufacture method thereof
  • TFT-LCD array substrate and manufacture method thereof
  • TFT-LCD array substrate and manufacture method thereof

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Embodiment Construction

[0066] The technical solutions of the present invention will be described in further detail below with reference to the accompanying drawings and embodiments.

[0067] figure 1 It is a plan view of the first embodiment of the TFT-LCD array substrate of the present invention, reflecting the structure of a pixel unit, figure 2 for figure 1 The cross-sectional view of A1-A1 in the middle, image 3 for figure 1 Sectional view of B1-B1 direction in the middle. Such as Figure 1 ~ Figure 3 As shown, the main structure of the TFT-LCD array substrate in this embodiment includes gate lines 11, data lines 12, pixel electrodes 13 and thin film transistors, the gate lines 11 and data lines 12 perpendicular to each other define pixel regions, and the thin film transistors and pixel electrodes 13 is formed in the pixel area, the gate line 11 is used to provide the turn-on or turn-off signal to the thin film transistor, the data line 12 is used to provide the data signal to the pixel e...

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Abstract

The invention relates to a TFT-LCD array substrate and a manufacture method thereof. The TFT-LCD array substrate includes gate lines and data lines, pixel electrodes and thin film transistors are formed in the pixel areas defined by the gate lines and data lines, the gate lines and data lines are positioned on the same layer, the pixel electrodes are formed on the insulating layer which is covering on the gate lines and data lines. Source electrode and drain electrode of the thin film transistor are positioned on the same layer where the gate lines are located; a doped semiconductor layer is formed on the source electrode and drain electrode, the semiconductor layer is formed on the doped semiconductor layer and covers channels between the source electrode and drain electrode, the gate electrode of the thin film transistor is formed on the insulating layer, the gate electrode is connected with the gate lines by a third through hole provided in the insulating layer. The invention is characterized in that only an insulating layer exists between the two plate electrodes of a storage capacitor, which allows the capacitance stored in unit area to be improved; simultaneously, the invention adopts the technical proposal which comprises firstly forming the channel and secondly forming the semiconductor layer, defects due to over etching or incomplete etching will not exist in TFT channel area, so that the yield rate is increased.

Description

technical field [0001] The invention relates to a thin film transistor liquid crystal display and a manufacturing method thereof, in particular to a TFT-LCD array substrate and a manufacturing method thereof. Background technique [0002] Thin Film Transistor Liquid Crystal Display (TFT-LCD for short) has the characteristics of small size, low power consumption, and no radiation, and occupies a dominant position in the current flat panel display market. [0003] TFT-LCD is mainly composed of an array substrate and a color filter substrate in a box, wherein thin-film transistors and pixel electrodes arranged in a matrix are formed on the array substrate, and each pixel electrode is controlled by a thin-film transistor. When the thin film transistor is turned on, the pixel electrode is charged during the turn-on time, and after the charging is completed, the voltage of the pixel electrode will be maintained until recharging in the next scan. Generally speaking, the liquid cry...

Claims

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Application Information

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IPC IPC(8): G02F1/1362G02F1/1368H01L21/82H01L21/768
Inventor 张弥
Owner BOE TECH GRP CO LTD
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