Signal isolation and amplification device

Abstract

The invention discloses a signal isolation and amplification device. The device comprises a power supply module, a filter protection module, a signal isolation module and an amplification module, wherein the power supply module is used for ground isolation of a power supply and voltage transformation of power supply voltage provided by the power supply; the filter protection module is connected with the power supply module and used for voltage limiting protection and filter of the transformed power supply voltage; the signal isolation module is connected with the filter protection module and used for signal isolation and zero point correction of the signals processed by the filter protection module; and the amplification module is connected with the signal isolation module and used for amplification of the signals processed by the signal isolation module. The signal isolation and amplification device has low temperature drift, low null drift and high precision, and is suitable for isolation and amplification of the high-precision signals in a semiconductor single crystal silicon furnace signal acquisition process.

Description

technical field [0001] The invention relates to the technical field of signal isolation and amplification, in particular to a signal isolation and amplification device suitable for the signal acquisition process of a semiconductor single crystal silicon furnace. Background technique [0002] Currently commonly used signal isolation amplifiers, the principle is to use isolation transformers to isolate signal ground, and at the same time use ordinary operational amplifiers to amplify the collected signals. This kind of amplifier can isolate some high-frequency disturbance signals in the power supply, but the isolation effect on low-frequency signals is not good; the use of ordinary signal isolation chips does not meet the requirements for use in terms of accuracy, and the signal isolation chip is easily affected by temperature. It is easy to form temperature drift; ordinary operational amplifiers have large temperature drift, poor linearity, poor precision, and the amplificati...

AI Technical Summary

Problems solved by technology

However, the signal acquisition in the semiconductor single crystal silicon furnace is easily disturbed by other signals, and the ordinary signal isolation amplifier is difficult to meet the requirements of the signal acquisition process of the semiconductor single crystal silicon furnace

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