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Nonvolatile memory element and semiconductor memory device provided with same

A non-volatile storage and component technology, used in semiconductor devices, electrical components, information storage, etc.

Active Publication Date: 2014-04-30
PANASONIC SEMICON SOLUTIONS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present invention was made in order to solve the above-mentioned problems, and its object is to provide a nonvolatile memory element and a semiconductor memory device including the nonvolatile memory element, even if a certain nonvolatile memory element fails. , it can also effectively prevent other non-volatile storage elements in the same row or column as the defective non-volatile storage element from being unable to write and read

Method used

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  • Nonvolatile memory element and semiconductor memory device provided with same
  • Nonvolatile memory element and semiconductor memory device provided with same
  • Nonvolatile memory element and semiconductor memory device provided with same

Examples

Experimental program
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no. 1 approach

[0071] [Summary structure]

[0072] figure 1 It is a schematic circuit diagram showing the nonvolatile semiconductor memory device 10 according to the first embodiment of the present invention. figure 2 yes means figure 1 It is a schematic plan view of the structure of the nonvolatile semiconductor memory device 10 shown in plan view (in plan view). and then, image 3 yes means figure 1 The figure showing the structure of the cross-sectional view of the nonvolatile semiconductor memory device 10 is shown along the figure 2 A schematic cross-sectional view of a cross-section taken along line III-III shown.

[0073] Such as figure 1 As shown, the semiconductor memory device 10 of the present embodiment has a nonvolatile memory element (nonvolatile memory element) 11 in which a current steering element 112 , a variable resistance element 105 , and a fuse 103 are connected in series. In more detail, one end of the fuse 103 is connected to the first wiring (word line) ...

no. 2 approach

[0141] Figure 11 It is a schematic cross-sectional view showing a semiconductor memory device 20 according to a second embodiment of the present invention. The semiconductor storage device 20 of this embodiment differs from the semiconductor storage device 10 of the first embodiment in that the fuse 103B is located between the variable resistance element 105 and the current steering element 112 . That is, the fuse 103B of the present embodiment functions as the second contact plug of the first embodiment. Furthermore, the semiconductor memory device 20 of this embodiment does not have the first contact plug of the above-mentioned first embodiment, and the lower electrode 106 of the variable resistance element 105 is directly connected to the first wiring 101 .

[0142] Specifically, the lower electrode 106 of the variable resistance element 105 is formed on the first wiring 101 . In addition, the resistance change layer 107, the upper electrode 108, and the fuse 103B of the...

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PUM

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Abstract

A nonvolatile memory element includes a current controlling element having a non-linear current-voltage characteristic, a resistance variable element which changes reversibly between a low-resistance state and a high-resistance state in which a resistance value of the resistance variable element is higher than a resistance value of the resistance variable element in the low-resistance state, in response to voltage pulses applied, and a fuse. The current controlling element, the resistance variable element and the fuse are connected in series, and the fuse is configured to be blown when the current controlling element is substantially short-circuited.

Description

technical field [0001] The present invention relates to a nonvolatile memory element and a semiconductor memory device provided with the nonvolatile memory element, and more particularly to a semiconductor memory device capable of reversing between a low-resistance state and a high-resistance state having a resistance value higher than the low-resistance state by applying a voltage pulse. A nonvolatile memory element of a ground-switching resistance change element and a semiconductor memory device. Background technique [0002] In recent years, with the development of digital technology, electronic devices such as mobile information devices and information home appliances have become more highly functional. Along with the higher functionality of these electronic devices, the miniaturization and speedup of the semiconductor elements used are rapidly advancing. Among them, the applications of large-capacity nonvolatile memories represented by flash memory are rapidly expandin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/10G11C13/00H01L45/00H01L49/00H10N99/00
CPCG11C2213/72H01L27/24H01L27/101G11C13/0002H10B63/00
Inventor 魏志强高木刚饭岛光辉
Owner PANASONIC SEMICON SOLUTIONS CO LTD