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Chuck and bridge connection points for tube filaments in a chemical vapor deposition reactor

A technology of chemical vapor deposition and reactor, which is applied in chemical instruments and methods, inorganic chemistry, gaseous chemical plating, etc., and can solve problems such as heating difficulties

Inactive Publication Date: 2011-06-01
GTAT CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, it will be very difficult to heat the thin rod with electric current in the startup phase of the CVD process, unless the silicon rod makes up for its deficiency with electrically active elements.

Method used

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  • Chuck and bridge connection points for tube filaments in a chemical vapor deposition reactor
  • Chuck and bridge connection points for tube filaments in a chemical vapor deposition reactor
  • Chuck and bridge connection points for tube filaments in a chemical vapor deposition reactor

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Embodiment Construction

[0035] Preferred embodiments of the present invention are described below with reference to the accompanying drawings, wherein like reference numerals represent like components.

[0036] Although the description herein refers to the fabrication of polysilicon, the techniques, apparatus, and methods described herein are not limited to polysilicon fabrication, but are useful for any material fabricated using CVD reactors and tubing. For example, such materials can be carbon fibers, carbon nanotubes, silicon dioxide, silicon germanium, tungsten, silicon carbide, silicon nitride, silicon oxynitride, titanium nitride, and various high-k dielectrics.

[0037] figure 2 is a cross-sectional view of a CVD reactor system 10 that can be used with the present invention. here figure 2 Equivalent to U.S. Patent No. 6,284,312 (which is hereby incorporated by reference) figure 2 . Although the CVD reactor system 10 used in the present invention is similar to that disclosed in U.S. Patent ...

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Abstract

A chemical vapor deposition reactor system includes one or more tube filaments connected to a bridge, each tube filament being connected to a chuck. The chuck-to-filament connection can include a seed formed on an end of the tube filament, the seed being connected to a protrusion of the chuck, or the filament may be formed directly onto the chuck. For the bridge-to-filament connection, a flat cross bridge or a rectangular bridge is connected with corresponding openings in the filament. Use of these connections can maintain electrical connectivity and thus resistive heating of the tube filaments during operation of the reactor system.

Description

[0001] cross reference [0002] The present invention claims the priority of US Provisional Application No. 61 / 074,824 (filing date: June 23, 2008); the disclosure content of the US Provisional Application is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to chemical vapor deposition (chemical vapor deposition, CVD) reactors capable of forming materials useful for semiconductor and / or photovoltaic applications, and more particularly to providing chucks and electrodes for improving tubing filaments in chemical vapor deposition reactors. Systems and methods for bridging connection points. Background technique [0004] Chemical vapor deposition (CVD) is a chemical process used to produce high-purity, high-efficiency solid materials. This process is commonly used in the semiconductor and photovoltaic industries to produce high-quality silicon materials. Conventional CVD processes expose rod-like structures to one or mor...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/24C23C16/46C01B33/035
CPCC23C16/24C23C16/46C01B33/035Y10T29/49885
Inventor 杰弗里·C·噶姆基斯·巴伦杰卡尔·查捷安迪·施韦因
Owner GTAT CORPORATION