Method for manufacturing silicon-penetrating coaxial line for microwave frequency band
A technology of microwave frequency band and coaxial line, which is applied in the field of high-density packaging, can solve the problems of lithography ability and lithography precision limitation, coaxial line difficulty, etc., and achieve small mechanical and physical damage, smooth inner wall of through hole, and excellent process technology. Effects in simple steps
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[0024] Embodiments of the present invention will be further specifically described below with reference to the accompanying drawings (6×6 array) in order to fully demonstrate the advantages and positive effects of the present invention. The scope of the present invention is not limited to the following examples.
[0025] exist figure 1 In the example, on the A-side of the silicon wafer "1" 101, a 6×6 array of coaxial lines is distributed, and the coaxial line holes 102 are formed by a deep reactive ion etching (DRIE) process.
[0026] exist figure 2 In the above, the photosensitive BCB layer 203 is coated on the A side of the silicon wafer "2" 201, and the coaxial line pattern 204 is formed after photolithography.
[0027] image 3 The structure of the coaxial line 301 passing through the silicon wafer "1" 101 is formed after all processes such as bonding, electroplating and polishing are completed.
[0028] Figure 4-1 to Figure 4-6 It is a process flow of high-density ...
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