38results about How to "Enable high-volume manufacturing" patented technology

The invention provides a non-photolithographic mesoscopic scale structure mechanical assembling and forming method used for obtaining a mesoscopic scale three-dimensional target configuration. The method comprises the following steps: a design step of designing a two-dimensional precursor structure corresponding to the target configuration and a pre-stretching dependent variable of an assembly platform used for forming the target configuration with the two-dimensional precursor structure through mechanical assembling and forming; a manufacturing step of cutting a two-dimensional planar material through femtosecond laser to form the two-dimensional precursor structure; a mechanical assembling and forming step of fixing the two-dimensional precursor structure at the assembly platform havingthe pre-stretching dependent variable, releasing the assembly platform to enable the two-dimensional precursor structure to at least partially flex and deform, and consequently forming the target configuration. The preparation method has high processing precision and is suitable for various high-performance materials, can efficiently and economically produce the mesoscopic scale structure with less chemical reagent, is environmental-friendly, and can be compatible to a semiconductor manufacturing technology.

The invention belongs to the field of high specific energy lithium metal batteries, and specifically discloses a porous ceramic composite lithium metal negative electrode and a preparation method thereof; the porous ceramic lithium metal negative electrode is composed of a porous ceramic skeleton, a conductive layer, and lithium metal, and is the same as a traditional lithium sheet Compared with the negative electrode, the advantages of the porous ceramic lithium metal negative electrode disclosed by the present invention are: the porosity of the porous ceramic skeleton can provide sufficient storage space for lithium metal; the rigidity of the porous ceramic skeleton can maintain the structural stability of the lithium metal negative electrode; the porous ceramic The large specific surface area of ​​the framework can effectively reduce the local current density of the lithium metal anode and alleviate the growth of lithium dendrites; the composite anode has high structural strength, high Coulombic efficiency, low polarization, no lithium dendrites, and good cycle stability. characteristics, at the same time, the preparation method is simple, and mass production can be realized. The porous ceramic lithium metal composite negative electrode of the present invention can be used to prepare high specific energy lithium metal secondary batteries, including organic electrolyte system lithium-ion batteries and lithium-air batteries, all-solid lithium-ion batteries and lithium-air batteries, and the like.

The invention relates to an anti-vibration device and a preparation method thereof, and the device comprises a basal body and a device carrier, wherein an anti-vibration platform and a plurality of anti-vibration cantilever beams are arranged on the upper surface of the basal body, one end of each anti-vibration cantilever beam is fixedly connected with the anti-vibration platform and each anti-vibration cantilever beam extends in a manner of being not in contact with the upper surface of the basal body; and the upper surface of the device carrier is used for carrying a device to be protected, a groove is arranged on the lower surface of the device carrier, the device carrier is connected with the anti-vibration cantilever beams, and the groove is not in contact with the anti-vibration platform. The anti-vibration device and the preparation method thereof are applicable to applications of microelectronic circuit chips and MEMS movable devices in protection and the like under vibrationenvironment, and have very strong applicability; the anti-vibration device uses the physical way to realize the anti-vibration function, thereby being unnecessary to use a high-precision control circuit and further reducing the system cost. The preparation method can adopt the conventional MEMS process equipment and realize the mass manufacture; furthermore, the process flow is simple, and the preparation method can be compatible with a variety of types of MEMS device processes, thereby being used for realizing a microelectronic system with more extensive and more powerful functions.

The invention relates to a variable rigidity beam, a manufacturing method and an actuating method thereof. The variable rigidity beam comprises a frame structure, a filling part nested in the frame structure, an insulating layer positioned on the filing part and a heating component positioned on the insulating layer. The variable rigidity beam of the invention has the technical characteristics of monolithic integration and good adaptivity, wide application and high additional value, and can overcome the shortcomings in the existing technology.

The invention discloses an integrated electrode slapper exploder. The integrated electrode slapper exploder comprises an integrated electrode assembly and an acceleration bore. A reflector plate is arranged on the lower surface of the end of the integrated electrode assembly in a matched mode. The acceleration bore is arranged on the upper surface of the end of the integrated electrode assembly. The end of the integrated electrode assembly is tightly clamped between the acceleration bore and the reflector plate. A slapper layer and explosion foil are stacked up and down to be located between the acceleration bore and the end of the integrated electrode assembly. An acceleration bore hole is formed in the position, corresponding to the center of the explosion foil, of the acceleration bore. The integrated electrode assembly is formed by sequentially pressing a lower insulating layer, a lower electrode core layer, a middle insulating layer, an upper electrode core layer, an upper insulating layer, the explosion foil and the slapper layer. The lower electrode core layer is in circuit connection with one end of the explosion foil, and the upper electrode core layer is in circuit connection with the other end of the explosion foil. According to the integrated electrode slapper exploder, the upper electrode core layer, the explosion foil and the lower electrode core layer form a circuit loop. After the explosion foil is powered up, electrical explosion can generate plasma to impact the slapper layer, the slapper layer is made to fly out of the acceleration bore hole of the acceleration bore, and percussion charging is performed to achieve the detonation function of slappers.

The invention relates to a micro-optical device and its preparation process, which is characterized in that it includes a fixed electrode, a movable electrode, a support beam, a glass substrate, a light reflection module and an optical fiber fixing module; the fixed electrode includes a Comb-tooth-type fixed electrodes on both sides of the top surface of the glass substrate and a plate-type fixed electrode fixed in the middle of the top surface of the glass substrate; the movable electrodes are two combs inserted between the comb-tooth-type fixed electrodes tooth-type movable electrodes and two flat-type movable electrodes respectively located above the flat-type fixed electrodes; the support beam includes a folding beam and a combined torsion beam, and the optical fiber fixing module is centered on the light reflection module, Several fiber grooves are arranged radially, and each of the fiber grooves is respectively aligned with one of the multiple light reflection surfaces on the light reflection module. The preparation method of the invention is simple in process, compatible with various types of MEMS device processes, and can be used to realize a micro-light integrated system with more powerful functions.

The invention relates to a method for manufacturing a silicon-penetrating coaxial line for a microwave frequency band. The method is characterized by comprising the following steps of: photoetching a coaxial line pattern on an oxide layer at the A side of a silicon slice (1) and etching coaxial line through holes by using a deep reactive plasma etching process, wherein the depth of each coaxial line through hole is smaller than the thickness of the silicon slice; sputtering a seed layer on the A side of a silicon slice (2), covering a layer of photoconductive BCB (Benzocyclobutene) and photoetching to obtain the plated pattern of the coaxial line; then, aligning the A sides of the silicon slices (1 and 2) by using a BCB linkage process and linking at a low temperature; grinding the B side of the silicon slice (1) by using a chemical mechanical polishing process until through holes are exposed, and plating the coaxial line; and finally, grinding the silicon slice (2) from the B side to remove metal on the seed layer. By adopting wafer-level processes compatible with a microelectronics process, such as photoetching, and the like, the invention ensures the accuracy of a transmission line and can realize the mass manufacture. The silicon-penetrating coaxial transmission line lessens the influence on the microwave performance when a signal passes by the silicon slice in high-density three-dimensional encapsulation and avoids the great loss of the silicon-penetrating transmission line.

The invention relates to a static actuator and preparation method and instantaneous perturbation resistance method thereof. The static actuator comprises a fixed electrode, a first movable electrode and a second movable electrode, wherein the fixed electrode is a pad-shaped electrode of the lead electrode which is fixedly connected with a substrate; the first movable electrode is a pad-shaped electrode which is arranged above the substrate for a set height; the second movable electrode is rectangular box pad-shaped electrode and is arranged between the fixed electrode and the first movable electrode and on the same plane of the first movable electrode; and the first movable electrode and the second movable electrode are both connected with elastic parts. The static actuator of the invention has technical characteristics of monolithic integration, adaptability and the like and also has high precision positioning and high reliability so as to effectively overcome the impact perturbationintroduced by the external environment, especially the perturbation caused by instantaneous vibration.

The invention relates to a micro-drive structure for realizing co-planar and out-of-plane motion and a preparation method thereof. The micro-drive structure of the present invention includes a fixed electrode, a movable electrode, a support beam, a glass substrate, and a drive output end; the fixed electrode includes The comb-shaped fixed electrodes connected to both sides of the top surface of the glass substrate and the plate-shaped fixed electrodes fixed in the middle of the top surface of the glass substrate; the movable electrodes are inserted in the comb-shaped fixed electrodes There are two comb-shaped movable electrodes between them and two flat-plate movable electrodes respectively located above the flat-plate fixed electrodes; the supporting beam includes a folded beam and a combined torsion beam. The present invention can not only realize the coplanar X-axis movement through the interaction between the comb-shaped movable electrode and the fixed electrode, but also realize the out-of-plane torsional movement of the drive output end through the interaction between the movable electrode and the fixed electrode. The invention has a simple technological process, is compatible with various types of MEMS device techniques, and can be used to realize a more powerful micro-light integrated system.