Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Minitype optical device and method for producing the same

An optical device and miniaturized technology, which is applied in the direction of optical components, optics, and optomechanical equipment, can solve problems such as increasing the difficulty of system maintenance, unfavorable for equipment miniaturization, and reducing system reliability, so as to achieve more powerful functions, lower difficulty and cost, the effect of achieving self-alignment

Active Publication Date: 2009-11-18
PEKING UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This will increase the cost of equipment, reduce system reliability, increase the difficulty of system maintenance and is not conducive to the miniaturization of equipment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Minitype optical device and method for producing the same
  • Minitype optical device and method for producing the same
  • Minitype optical device and method for producing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Embodiment 1: When making a micro-optical device with a single-ended unequal-height support beam, the following processes are mainly adopted:

[0042] 1. The starting material is double-throwing N-type (100) silicon wafer 11 (such as Figure 6a shown), the thickness is 400±10 microns;

[0043] 2. Form a silicon oxide mask 12 on the silicon wafer 11, and then etch a deep groove 13. The depth of the deep groove 13 determines the gap between the fixed electrode 3 and the movable electrode 5 on the glass substrate;

[0044] 3. If Figure 6b As shown, the silicon oxide mask 12 is removed, and the surface of the silicon wafer 11 is doped with boron 14 by ion implantation or diffusion process to form an ohmic contact;

[0045] 4. If Figure 6c Shown, make metal electrode 15 on glass substrate 8, as the lead electrode of micro-drive structure;

[0046] 5. If Figure 6d As shown, the glass substrate 8 and the silicon wafer 11 are anodically bonded, and the silicon wafer 11 ...

Embodiment 2

[0049] Embodiment 2: When making a micro-optical device with unequal-height support beams at both ends, the following processes are mainly used:

[0050] 1. The starting material is double-throwing N-type (100) silicon wafer 11 (such as Figure 6a shown), the thickness is 400±10 microns;

[0051] 2. At first, silicon oxide mask 19 is formed on silicon wafer 11, and then photoresist mask 20 is formed on silicon oxide mask 19 surface (such as Figure 7a shown), and then form a composite mask of silicon oxide and photoresist; then use photoresist 20 as a mask to etch deep grooves 21 (such as Figure 7b shown), the depth of the deep groove 21 determines the lower end height difference between the combined torsion beam 7 and the folded beam 6 (comprising 71, 72, 73 etc. beams) (as Figure 7c shown);

[0052] 3. Remove the photoresist mask 20, and use the silicon oxide mask 19 as a mask to etch the silicon wafer 11 to form a deep groove 22. The depth of the deep groove 22 determi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a micro-optical device and its preparation process, which is characterized in that it includes a fixed electrode, a movable electrode, a support beam, a glass substrate, a light reflection module and an optical fiber fixing module; the fixed electrode includes a Comb-tooth-type fixed electrodes on both sides of the top surface of the glass substrate and a plate-type fixed electrode fixed in the middle of the top surface of the glass substrate; the movable electrodes are two combs inserted between the comb-tooth-type fixed electrodes tooth-type movable electrodes and two flat-type movable electrodes respectively located above the flat-type fixed electrodes; the support beam includes a folding beam and a combined torsion beam, and the optical fiber fixing module is centered on the light reflection module, Several fiber grooves are arranged radially, and each of the fiber grooves is respectively aligned with one of the multiple light reflection surfaces on the light reflection module. The preparation method of the invention is simple in process, compatible with various types of MEMS device processes, and can be used to realize a micro-light integrated system with more powerful functions.

Description

technical field [0001] The invention relates to an optical device and a preparation method thereof, in particular to a micro-optical device with mixed functions of an optical switch and a variable optical attenuator and a preparation method thereof. Background technique [0002] Optical switches and variable optical attenuators realized by microelectromechanical systems (MEMS) technology have the advantages of small size, light weight, low energy consumption, and stable performance. With the rapid development of optical fiber communication technology and dense wavelength division multiplexing system, MEMS optical switches and variable optical attenuators, as important optical waveguide devices, have been more and more widely used. There have been many reports on the research on MEMS optical switches and variable optical attenuators. These devices are designed, manufactured and packaged in the form of discrete devices, and can well realize the function of optical switching o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G02B26/08G03F7/00B81C1/00
Inventor 陈庆华吴文刚王子千闫桂珍郝一龙王阳元
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products