Vertical surrounding grid junction type field effect transistor, preparation method and applications thereof

Abstract

The invention relates to a vertical surrounding grid junction type field effect transistor, a preparation method and applications thereof. The field effect transistor comprises a source area, a drain area, a surrounding grid, a sensitive grid, a channel and a source-drain area press welding block or metal lead; wherein the source area and the drain area are connected through the channel; the sensitive grid and the surrounding grid are connected; the surrounding grid surrounds the upper surface, the left surface and the right surface of the channel which is vertical; the channel and the surrounding grid form a Pn junction; the source area and the drain area are electrically connected with an external circuit through the press welding block or the metal lead. The field effect transistor and a sensitive structure are manufactured on the top layer silicon of an SOI silicon chip and are simultaneously manufactured by adopting a micro-mechanical processing method. The displacement detection on the sensitive structure is realized through capacitance coupling.

Description

technical field [0001] The invention relates to a vertical surrounding gate junction type field effect transistor for sensor displacement detection, a manufacturing method and an application thereof, belonging to the field of sensors. Background technique [0002] Capacitance detection is a commonly used displacement detection technology in Micro-Electro-Mechanical-System (MEMS) (M.Bao, Micro Mechanical Transducers, Press: ELSEVIER, 2000.). A variety of micro-machined acceleration sensors and micro-machined gyroscopes use capacitance detection methods to achieve accurate measurement of the displacement of sensitive structures. With the increase of the integration degree and the decrease of the size of the MEMS integrated system, the capacitance value of the sensitive capacitor decreases accordingly. The sensitive capacitance value of the acceleration sensor made by the surface micromachine and SOI (Silicon on Insulator, silicon on insulator) micromachine technology is mostl...

AI Technical Summary

Problems solved by technology

Since the vibrating double-gate MOS transistor and the vibrating double-gate junction field effect transistor are both planar structures, it is generally necessary to make a vertical structure that is fixedly connected to the grid to achieve sensitivity to the lateral vibration of the sensitive structure, thereby significantly increasing the complexity of the process.

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