Resistance change memory with optimized resistance change characteristic and preparation method thereof

A technology of resistive variable memory and resistive variable characteristics, which is applied in the direction of gaseous chemical plating, metal material coating process, electrical components, etc., can solve the problems of easy data loss, thinning of memory, and difficulty in breaking through process bottlenecks of flash memory, etc., to achieve Effects of reducing thermal budget, improving precision, and optimizing resistance-switching characteristics

Inactive Publication Date: 2011-06-22
FUDAN UNIV
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Problems solved by technology

[0002] With the continuous shrinking of integrated circuit process technology nodes, traditional flash memory (Flash) non-volatile memory cannot be thinned indefinitely with the development of integrated circ

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  • Resistance change memory with optimized resistance change characteristic and preparation method thereof
  • Resistance change memory with optimized resistance change characteristic and preparation method thereof
  • Resistance change memory with optimized resistance change characteristic and preparation method thereof

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Embodiment Construction

[0024] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. In the drawings, for the convenience of illustration, the thicknesses of layers and regions are enlarged or reduced, and the sizes shown do not represent actual sizes. Although these figures do not fully reflect the actual size of the device, they still completely reflect the mutual positions between the regions and the constituent structures, especially the upper-lower and adjacent relationships between the constituent structures.

[0025] figure 2 A cross-sectional view of an embodiment of a resistive variable memory using hafnium oxide and aluminum oxide thin films as functional layers provided by the present invention, as shown in figure 2 As shown, the RRAM includes a top electrode 101, a bottom electrode 104, and HfO as a functional layer between the top electrode 101 and the bottom electrode 104. 2 Layer 103 and Al 2 o 3 Lay...

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Abstract

The invention belongs to the technical field of non-volatile memories, in particular to a resistance change memory with an optimized resistance change characteristic and a preparation method thereof. In the resistance change memory provided by the invention, hafnium oxide and aluminum oxide films growing by an atomic layer deposition method are used as functional layers, and the optimization of the resistance change characteristic is achieved by adjusting the ratio of thicknesses of the hafnium oxide film and the aluminum oxide film. The preparation method comprises the following steps of: growing the hafnium oxide film with fixed thickness on a bottom electrode by using the atomic layer deposition method, and growing the aluminum oxide films with different thicknesses so as to obtain the resistance change memories with different characteristics. By a single atomic-scale deposition growth technology, the accuracy of preparing a resistance change memory device can be accurately controlled, the technological precision is improved and thermal budget is reduced.

Description

technical field [0001] The invention belongs to the technical field of non-volatile memory, and in particular relates to a resistive variable memory and a preparation method thereof. Background technique [0002] With the continuous shrinking of integrated circuit process technology nodes, traditional flash memory (Flash) non-volatile memory cannot be infinitely thinned with the development of integrated circuit technology because of its floating gate, and it is difficult for flash memory to break through the 45nm process Bottleneck, in addition, dynamic and static memory are easy to lose data after power failure. In recent years, various new types of non-volatile memory have been developed rapidly, such as ferroelectric memory (FRAM), magnetic memory (MRAM), phase change memory (PRAM) and resistive change memory (RRAM). [0003] Among these memories, the information read and write of the resistive variable memory is realized by reading or changing the resistance of the res...

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Application Information

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IPC IPC(8): H01L45/00C23C16/44C23C16/40
Inventor 郭姣姣孙清清王鹏飞张卫
Owner FUDAN UNIV
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