Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for cutting wafers

A technology of wafers and blades, which is applied in the field of new technology that can improve the cutting quality of quartz wafers. It can solve the problems of affecting processing efficiency, affecting surface quality, and increasing pre-cutting time, so as to reduce the time of grinding and finishing, and reduce the breakage of knives. probability, the effect of reducing thickness dispersion

Inactive Publication Date: 2014-02-12
JIANGSU UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

First of all, the whole knife is carried out. The traditional process does not refine the wafers with different thickness requirements. Different thicknesses of shims and different pressures are applied to the whole knife. This will cause the preload of the blade to be too large or too small, and the wafers with different thickness requirements are cut The thickness is the same, and there is a large error with the standard thickness, which reduces the efficiency of subsequent grinding and finishing
Then mix the sand liquid. There is no recognized standard for the existing sand liquid configuration. Generally, each manufacturer only has one sand liquid configuration. This will affect the surface quality of wafers with different thicknesses and increase the cost of subsequent finishing. time
Pre-cutting starts after the sand solution is prepared. Generally, the time is used as the standard. The cutting time is one to one and a half hours. It may be because the blade and the ingot have not fully contacted, which will affect the quality of the slice and may even cause the knife to break, or it may have been fully contacted before. And increase the pre-cutting time, thus affecting the processing efficiency
Finally, start slicing. In the past, adding sand once an hour will lead to a thicker sand concentration, resulting in different thickness and quality of the slices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for cutting wafers

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] Referring to the comparison table of some parameters, the present invention mainly relates to a new process for improving the cutting quality of wafers.

[0013] 1. According to the requirements of the thickness of the wafer to be processed, select the thickness of the shim to start the knife. The thickness of the shim is 0.04-0.06mm larger than the thickness of the wafer to be processed. Measure the perpendicularity between the blade and the shim until it is smooth So far, use a vernier caliper to measure the width between the blades on both sides. When the difference between the two sides is 0.03±0.005mm, the whole knife is over. Then start to pressurize the blade to make it stretch straight. According to the thickness of the wafer to be processed, select different tension values. The range of tension value is from 24-40MPa. larger value. Based on the processing of wafers with a thickness of 0.325-0.375mm as the standard, the thickness of the knife shim is 0.4mm, and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method beonging to the machining field, in particular to the method for cutting wafers. The method concretely comprises a blade adjusting technology and a sand mixing technology. Based on the blade adjusting technology, gaskets with corresponding thicknesses are selected according to the thicknesses requirements of different wafers, one gasket is put between each two blades, and then blade adjustment is began, and finally the effect that the value of thicknes difference on both sides of an integral cutting device ranges from 0.025 to 0.035mm is achieved, and the blades are in a straightening state. Based on the sand mixing technology, sand solution in different concentrations is configured according to the thickness requirements of the different wafers. During the cutting process, sand solution is removed at first before sands are added hourly, corresponding cutting oil is added, and the concentration of cutting fluid is kept accordant. The method for cutting the wafers improves the uniformity and the surface quality of the wafers.

Description

technical field [0001] The invention relates to a process method in the field of mechanical processing, in particular to a new process capable of improving the cutting quality of quartz wafers. Background technique [0002] Quartz crystal devices have excellent frequency selection and stabilization characteristics, and are the core components of frequency selection and control in electronic information technology. They are widely used in computers, household appliances, aerospace electronics, mobile communications, satellites, and military equipment. It is an indispensable and important component in the development of the information industry. The process of cutting the ingot into wafers has a direct impact on the precision, quality, efficiency, processing cost, service life of the machine and the difficulty of subsequent processing of the wafer. [0003] At present, the known wafer cutting process is: whole knife-mixing sand solution-pre-cutting-slicing. First of all, the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B28D5/00
Inventor 王树林周波裴宏杰张伟展宋志鹏李尊栋
Owner JIANGSU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products