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Semiconductor light source mining lamp

A technology of industrial and mining lamps and semiconductors, which is applied in the field of semiconductor light source industrial and mining lamps, and can solve problems such as the temperature rise of the radiator 13 and the temperature of the power supply box 14, and achieve the effect of reducing the temperature of the junction

Inactive Publication Date: 2011-06-29
DALIAN GOLDEN THERMALWAY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the power supply is working, it will also generate a large amount of heat, which will increase the temperature of the entire power supply box 14, thereby causing the temperature at the upper end of the radiator 13 to increase.

Method used

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  • Semiconductor light source mining lamp
  • Semiconductor light source mining lamp
  • Semiconductor light source mining lamp

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] figure 2 It is a schematic structural diagram of a semiconductor light source industrial and mining lamp provided in Embodiment 1 of the present invention, image 3 for figure 2 The schematic diagram of the side sectional structure of the semiconductor light source industrial and mining lamp shown. The semiconductor light source industrial and mining lamp of this embodiment includes a heat sink and an aluminum substrate 11. One or more LED chips 1 are mounted on the surface of the aluminum substrate 11. Generally, a high-power industrial and mining lamp will include a plurality of LED chips 1, which are arranged in a distributed manner. on the aluminum substrate 11. In order to play a role in concentrating light, the lampshade 2 is generally connected to the aluminum substrate 11. The middle part of the lampshade 2 has a through hole and is arranged under the phase change heat transfer cylinder 3 to reflect the light emitted by the LED chip 1 when it is working.

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Embodiment 2

[0043] Figure 4 The structure schematic diagram of the semiconductor light source industrial and mining lamp provided by the second embodiment of the present invention, this embodiment is a further improvement on the basis of the first embodiment. In order to clearly describe its structure, the lampshade is omitted in the figure.

[0044] The difference between this embodiment and the first embodiment is that: besides the driving circuit 61 , it also includes a driving power source 8 . The drive circuit 61 is connected to the drive power supply 8 and the LED chip 1; the heat dissipation area formed by the heat dissipation fins 31 is provided with a recessed portion 81 ( Figure 4 The region indicated by the dotted line in the middle), the driving power supply 8 is embedded in the recessed portion 81 opened on the heat dissipation fin 31 .

[0045] In this embodiment, the drive power supply 8 is arranged outside the phase-change heat transfer cylinder 3, the drive circuit 61...

Embodiment 3

[0050] Figure 5 The structural schematic diagram of the semiconductor light source industrial and mining lamp provided for the third embodiment of the present invention, as shown in Figure 5 As shown, the difference between this embodiment and Embodiment 1 is that the bulk device also includes: a built-in bin 9, which can also be designed as a cylinder, nested in the phase change heat transfer cylinder 3, and the built-in bin 9 9 is open at one end away from the aluminum substrate 11. The inner wall of the phase change heat transfer cylinder 3, the outer wall of the built-in chamber 9 and the annular top cover plate 34 together form a sealed cavity for filling liquid working fluid. The built-in compartment 9 is provided with a driving power supply 8 and a driving circuit 61 , and the driving circuit 61 is connected to the driving power supply 8 and the LED chip 1 .

[0051] The driving circuit 61 can be connected to the LED chip 1 by going around from the outside of the co...

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PUM

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Abstract

The invention discloses a semiconductor light source mining lamp. The lamp comprises a radiating device and an aluminum substrate, wherein the surface of the aluminum substrate is provided with light emitting diode (LED) chips; the radiating device comprises a phase change heat transfer cylinder which forms a sealed cavity; the sealed cavity is filled with liquid working medium which is subjected to phase change when heated; the outer wall of the phase change heat transfer cylinder is provided with radiating fins; and the phase change heat transfer cylinder is arranged on the surface of the aluminum substrate and is away from the LED chips. In the lamp, a technical means of phase change heat transfer is adopted; and a phase change process of the liquid working medium is utilized to quickly, uninterruptedly and circularly transfer heat, and the heat produced by the LED chips is quickly transferred to a shell of the phase change heat transfer cylinder and the radiating fins, so that the junction temperature of the LED chips can be effectively reduced.

Description

technical field [0001] Embodiments of the present invention relate to optoelectronic technology, in particular to a semiconductor light source industrial and mining lamp. Background technique [0002] High bay lamp is a kind of lighting equipment widely used in factory workshops, mine working surfaces and warehouses. Since the space height of these places is usually high, and there are certain special requirements for brightness and light irradiation direction, the power of high bay lights is usually high, and the light irradiation angle is small. The light source of traditional industrial and mining lamps usually uses incandescent lamps, tungsten halogen lamps or high-pressure gas discharge lamps. These lamps generally have the defects of high energy consumption and short service life. [0003] With the advent of the fourth-generation light source-semiconductor light source, the development of energy-saving lighting products has achieved a new leap. This kind of semicond...

Claims

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Application Information

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IPC IPC(8): F21S8/00F21V29/00F21V23/00F21W131/402F21Y101/02F21V29/51F21Y115/10
Inventor 杨洪武车廷建
Owner DALIAN GOLDEN THERMALWAY TECH
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