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Doped III-N bulk crystal and self-supporting doped III-N substrate

A III-N, self-supporting technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of labor, low defect density, high cost, etc.

Active Publication Date: 2011-08-03
夫莱堡复合材料公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The disadvantages of this approach are firstly the comparatively high costs based on the laborious substrate lift-off technique, and secondly the fundamental difficulty of producing III-N materials with a uniform, low defect density
The method requires complex extensions to gas delivery as well as sources within the reactor

Method used

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  • Doped III-N bulk crystal and self-supporting doped III-N substrate
  • Doped III-N bulk crystal and self-supporting doped III-N substrate
  • Doped III-N bulk crystal and self-supporting doped III-N substrate

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Embodiment Construction

[0032] In HVPE, Group III source materials are pre-placed in the reactor in elemental form. At elevated temperatures, for example in the range of 800 to 900° C., HCl is directed over the liquid material which reacts to form chloride compounds which are then directed to the growth region. The dopant is added directly to the raw material and dissolved there in a defined proportion. As long as HCl is directed over the source, both the chloride compound of the Group III material and the chloride compound of the dopant species are formed. They are then guided together in a line in an adjustable, defined ratio of group III material to dopant to the growth region and also jointly touch the crystal surface. The HCl flow over the melt simultaneously regulates the growth rate and doping of the crystals. In practice, therefore, there is always substantially the same ratio of group III material and dopant substance. The doping in the crystal is thus independent of the growth rate and t...

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Abstract

The invention relates to doped III-N bulk crystal and a self-supporting doped III-N substrate. III represents at least one of Al, Ga and In in III main group in a periodic table, and N represents nitrogen. In the doped III-N bulk crystal and the self-supporting doped III-N substrate, the dopants are respectively distributed uniformly in the growth direction and the growth plane perpendicular to the growth direction. Correspondingly, the carrier concentration and / or specific resistance can be uniformly distributed in the growth direction and the growth plane perpendicular to the growth direction. In addition, the crystal with good quality can be obtained.

Description

[0001] The patent application of the present invention is based on the invention filed on August 9, 2006 entitled "Method for making doped III-N bulk crystals and self-supporting, doped III-N substrates and doped III-N -N bulk crystal and self-supporting, doped III-N substrate" is a divisional application of Chinese patent application No. 200680055569.1. technical field [0002] The present invention relates to a method for producing doped III-N bulk crystals from the gas phase, and to a method for producing free-standing, doped III-N substrates, said III-N substrates The bottom is made of doped III-N bulk crystals. Here, N stands for nitrogen and III stands for at least one element of main group III of the periodic table selected from the group consisting of aluminum, gallium and indium (hereinafter abbreviated partially with (Al, Ga, In)). The invention also relates to doped III-N bulk crystals and free-standing, doped III-N substrates obtainable by said method. The free-s...

Claims

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Application Information

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IPC IPC(8): C30B29/40C30B25/20
Inventor 费迪南德・肖尔茨彼得・布鲁克纳弗兰克・哈贝尔贡纳尔・莱比戈
Owner 夫莱堡复合材料公司