Resistance-free bandgap voltage reference source

A reference voltage source, no resistance technology, applied in the field of power supply, to achieve the effect of reduced area, low temperature coefficient, and reduced complexity

Inactive Publication Date: 2011-08-10
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to solve the problems existing in the existing non-res

Method used

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  • Resistance-free bandgap voltage reference source
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Embodiment Construction

[0019] The present invention will be further elaborated below in conjunction with the accompanying drawings and specific embodiments.

[0020] Such as figure 1 As shown, the resistorless bandgap reference voltage source includes a start-up circuit, a self-bias current source circuit, and a voltage follower circuit with a PTAT offset, wherein the start-up circuit is connected to a self-bias current source circuit with a PTAT offset A voltage follower is connected to a self-biasing current source circuit.

[0021] Here, the self-bias current source circuit includes PMOS transistors MP1, MP2, and MP3, NMOS transistors MN1, MN2, MN3, MN4, and MN6, and triodes Q1, Q2, and Q3. External power supply, the substrate of the NMOS transistor is grounded, the base and collector of the triode are grounded, the gate and drain of MP3 are shorted, and are connected to the gates of MP1 and MP2 at the same time, and the drains of MP1, MP2, and MP3 are respectively connected to MN1, The drains ...

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Abstract

The invention discloses a resistance-free bandgap voltage reference source, specifically comprising a start-up circuit, a self-biasing current source circuit and a voltage follower with PTAT (Proportional To Absolute Temperature) offset, wherein the start-up circuit is connected with the self-biasing current source circuit; and the voltage follower with PTAT offset is connected with the self-biasing current source circuit. Without using a resistor in the circuit structure, the resistance-free bandgap voltage reference source provided by the invention can be compatible with a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process, so that the designing complexity is reduced and the area of a chip is reduced; in addition, due to the adoption of the self-biasing current source circuit and the voltage follower with PTAT offset in the voltage reference source disclosed by the invention, the reference voltage has lower temperature coefficient, and meanwhile, the power supply rejection ratio of a bandgap voltage reference source is increased.

Description

technical field [0001] The invention belongs to the technical field of power supplies, and in particular relates to the design of a bandgap reference voltage source. Background technique [0002] In the design process of the reference voltage source, the technology of generating a fixed voltage based on the bandgap voltage of silicon is usually used to generate the reference voltage. The principle is to superimpose a voltage with a positive temperature coefficient and a voltage with a negative temperature coefficient in a certain ratio. , to produce a voltage value that does not vary with ambient temperature and power supply voltage. When the temperature is close to 0K, this reference voltage is close to the band gap voltage of silicon, which is called the "band gap reference" voltage. [0003] The voltage with a positive temperature coefficient usually comes from the difference between the base-emitter voltages of two bijunction transistors, ΔV BE , the voltage with a neg...

Claims

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Application Information

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IPC IPC(8): G05F1/56
Inventor 周泽坤钟博封鲁平马颖乾明鑫张波徐祥柱
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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