Method and device for cleaning wafer

Abstract

The invention discloses a method and a device for cleaning wafers. The method for cleaning wafers comprises the following steps: providing a platform for bearing and rotating a wafer, wherein the wafer is provided with a surface to be cleaned; arranging a nozzle above the wafer for spraying cleanout fluid on the surface to be cleaned; then cleaning: rotating the wafer; and moving the nozzle at non-constant velocity to a second set point from a first set point on the surface to be cleaned so that the time the first set point exposes to the cleanout fluid is same with the time the second set point exposes to the cleanout fluid. In addition, the nozzle moves slowly when close to the edge of the wafer, and moves faster when close to the centre of a circle of the wafer.

Description

technical field [0001] The invention relates to a wafer cleaning method, in particular to a cleaning method capable of maintaining the uniformity of the wafer surface. Background technique [0002] Semiconductor devices are fabricated from semiconductor wafers that undergo several processing operations. These operations include, for example, dopant implantation, gate oxide generation, interlayer dielectric layer formation, metallization deposition, line patterning, etching operations, chemical mechanical polishing (CMP), and the like. Usually after chemical mechanical grinding, etching, or photoresist development, there will be residues left on the wafer surface, such as chemical liquid components or chemical polymers. Therefore, in order to keep the wafer surface clean, it is necessary to properly clean the wafer. Give cleansing treatment. Usually, a liquid spraying device is used to use a rinsing liquid, such as a specific cleaning solution or deionized water, to remove ...

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Problems solved by technology

However, because during rotation, the tangential speeds of the regions with different distances from the center of the wafer on the wafer are different, thus causing different regions to be exposed to the rinse liquid at different times. For example, the tangential speed of the wafer edge is greater than that of the wafer center, so Rinse fluid at the edge of the wafer will be thrown off the wafer surface faster, while rinse fluid at the center of the wafer will stay longer

In this way, the residues on the surface of different positions of the wafer and the material layer on the surface are removed by the rinsing liquid to different degrees, resulting in poor uniformity of the wafer surface

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