Thin film transistor liquid crystal display (TFT-LCD) array substrate and manufacturing method thereof

A thin film transistor and liquid crystal display technology, which is applied in the manufacture of semiconductor/solid state devices, semiconductor devices, electric solid state devices, etc. The effect of electrode delay

Inactive Publication Date: 2011-08-17
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a TFT-LCD array substrate and its manufacturing method, which can effectively solve the technical defects of high production cost and common electrode delay of the existing structure

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  • Thin film transistor liquid crystal display (TFT-LCD) array substrate and manufacturing method thereof
  • Thin film transistor liquid crystal display (TFT-LCD) array substrate and manufacturing method thereof
  • Thin film transistor liquid crystal display (TFT-LCD) array substrate and manufacturing method thereof

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Embodiment Construction

[0073] The technical solutions of the present invention will be described in further detail below with reference to the accompanying drawings and embodiments. The film thicknesses and area sizes and shapes of the various layers in the drawings do not reflect the true proportions of the TFT-LCD array substrate, but are only intended to schematically illustrate the contents of the present invention.

[0074] figure 1 It is a plan view of the first embodiment of the TFT-LCD array substrate of the present invention, reflecting the structure of a pixel unit, figure 2 for figure 1 The cross-sectional view of A1-A1 in the middle, image 3 for figure 1 Sectional view of B1-B1 direction in the middle. Such as Figure 1 ~ Figure 3 As shown, the main structure of the TFT-LCD array substrate of the present invention includes gate lines 11, data lines 12, pixel electrodes 13, common electrodes 14, black matrix 9 and thin film transistors formed on the substrate 1, gate lines 11 and d...

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Abstract

The invention relates to a thin film transistor liquid crystal display (TFT-LCD) array substrate and a manufacturing method thereof. The array substrate comprises a grid line and data lines which are formed on a substrate and define a pixel region, wherein a pixel electrode, a TFT and common electrodes are formed in the pixel region. The array substrate also comprises a black matrix which is prepared from conductive film materials and is connected with the common electrodes. The manufacturing method comprises the following steps: forming a graph comprising the grid line, the data lines, the pixel electrode and the TFT; and forming a graph comprising the common electrodes and the black matrix. The array substrate and the manufacturing method have the following beneficial effects: the black matrix can not only effectively shelter the light leakage region but also serve as the connection bus of the common electrodes by arranging the graph comprising the black matrix on the array substrate and connecting the black matrix with the common electrodes, thus effectively overcoming the technical defects of high production cost of the existing structure and common electrode delay.

Description

technical field [0001] The invention relates to a thin film transistor liquid crystal display and a manufacturing method thereof, in particular to a thin film transistor liquid crystal display array substrate and a manufacturing method thereof. Background technique [0002] In Thin Film Transistor Liquid Crystal Display (TFT-LCD) products, Advanced-SuperDimensional Switching (Advanced-SuperDimensional Switching; AD-SDS) is a new technology that can improve LCD image quality in recent years. One of the technologies, it can realize the requirements of high penetration and large viewing angle at the same time. AD-SDS forms a multi-dimensional spatial composite electric field through the parallel electric field generated by the edge of the pixel electrode in the same plane and the vertical electric field generated between the pixel electrode layer and the common electrode layer, so that all the pixels between the pixel electrodes in the liquid crystal cell, directly above the el...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1368G02F1/1362H01L21/77H01L27/12
CPCG02F2201/121H01L27/1259G02F1/134363H01L27/124G02F1/136209G02F2202/16G02F1/1343G02F1/1368
Inventor 金原奭金永珉金馝奭
Owner BOE TECH GRP CO LTD
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