Chain type phase-change memory structure

Abstract

The invention relates to a chain type phase-change memory structure, comprising at least two serially connected phase-change memory units, wherein each of the phase-change memory units includes a field-effect transistor and a phase change resistance memory unit. The source end and the drain end of the field-effect transistor are respectively connected with two ends of the phase-phase resistance memory unit; the source end of the field-effect transistor is connected with the drain end of the adjacent field-effect transistor to form a field-effect transistor chain; and one block selection transistor is connected with the drain end of the adjacent field-effect transistor to control the connection between the field-effect transistor chain and the outer part. During the reading and writing process, as the field-effect transistor of the non-gated memory unit is at on-state, the two ends of the corresponding phase change unit are at the short-circuit state and are grounded. The two ends of the phase-change material of the non-gated memory unit are at grounding state so as to remove the influence caused by the crosstalk of bit lines.

Description

technical field [0001] The invention relates to the field of integrated circuit design of semiconductor memory, and more specifically relates to a structure of a phase-change memory. Background technique [0002] The phase-change memory unit is based on the idea that phase-change thin films can be applied to phase-change storage media proposed in the late 1960s and early 1970s. It is a storage device with low price and stable performance. Phase-change memory cells can be made on silicon wafer substrates, and its key materials are recordable phase-change films, heating electrode materials, heat insulating materials, and lead-out electrode materials, and its research hotspots also revolve around device technology. The research on the physical mechanism of the device includes how to reduce the device material and so on. The basic principle of the phase change memory unit is to use an electric pulse signal to act on the device unit, so that the phase change material undergoes a...

AI Technical Summary

Problems solved by technology

The word line or bit line of the selected cell will affect the change of the resistance of another resistance cell on the same bit line or word line, in which case it is possible to destroy the stored information of the bit line or word line

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