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Novel double-surge protection device with single-chip integration and manufacturing method thereof

A protection device and monolithic integration technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of single surge form and inability to integrate surge devices, so as to reduce costs and prevent surges Effect of effect improvement

Inactive Publication Date: 2011-08-17
NORTH CHINA UNIVERSITY OF TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The structure is single and in the form of discrete devices. Such devices can protect a single form of surge. In practical applications, in order to protect the safety of the system, a variety of surge protection devices are often used in series, so as to meet the needs of the system; Moreover, the surge device in the prior art cannot be integrated inside the system chip

Method used

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  • Novel double-surge protection device with single-chip integration and manufacturing method thereof
  • Novel double-surge protection device with single-chip integration and manufacturing method thereof
  • Novel double-surge protection device with single-chip integration and manufacturing method thereof

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specific Embodiment

[0036] Device structure equivalent circuit of the present invention such as figure 1 As shown, it includes an LDMOS device and an equivalent diode group connected in parallel, which is a plurality of back-to-back series diodes formed by ion implantation on the polysilicon film, one end of which is connected to the drain of the LDMOS device, and the other end is connected to the Gate of the LDMOS device.

[0037] like figure 2 Shown is the diode structure in the present invention, the diode is made of polysilicon film, one end is connected to the drain of LDMOS, and the other end is connected to the gate of LDMOS

[0038] The main device in the present invention is an LDMOS device, and its cross-sectional structure is as image 3 As shown, LDMOS is a device developed from DMOS. As the name implies, it is a horizontal MOSFET, including source, gate, drain and substrate. The basic principle is to use the gate voltage to control the flow through the source and drain. current b...

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Abstract

The invention discloses a novel double-surge protection device with single-chip integration and a manufacturing method thereof. The double-surge protection device comprises an LDMOS (laterally diffused metal-oxide semiconductor) device and a diode group, wherein the diode group comprises a plurality of diodes which are connected in series in a back-to-back manner, one end of the diode group is connected to a drain electrode of the LDMOS device, and the other end of the diode group is connected to a gate electrode of the LDMOS device. After completing the manufacturing of the LDMOS device, the diode group is directly manufactured in a region of the gate electrode of the LDMOS device. The working principle and the structure are equivalent to the combination of the diodes and the LDMOS, and the novel double-surge protection device has the advantages of improving the anti-surge effect, simultaneously being capable of being integrated onto a chip, and reducing the cost of a surge device.

Description

technical field [0001] The invention relates to a surge protection device, in particular to a monolithically integrated novel double surge protection device and a manufacturing method thereof. Background technique [0002] In electronic equipment and systems, there will always be some sudden voltage changes or even external disturbances, such as static electricity, etc. We call these transient overvoltages "surges", and the existence of these surges will affect the reliability of electronic devices and systems In order to eliminate these unexpected transient overvoltages, many TVS (transient voltage suppressor diodes) devices have appeared on the market. [0003] TVS components in the prior art are generally n+p+ zener diodes or ceramic piezoresistors, which generally use the principle of shunting. Before the protected device or system is broken down, the protection device is first broken down , so as to guide the current out to achieve the purpose of protecting the latter ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L27/06H01L21/8248
CPCH01L27/0255H01L29/7821
Inventor 姜岩峰
Owner NORTH CHINA UNIVERSITY OF TECHNOLOGY
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