Novel double-surge protection device with single-chip integration and manufacturing method thereof
A protection device and monolithic integration technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of single surge form and inability to integrate surge devices, so as to reduce costs and prevent surges Effect of effect improvement
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[0036] Device structure equivalent circuit of the present invention such as figure 1 As shown, it includes an LDMOS device and an equivalent diode group connected in parallel, which is a plurality of back-to-back series diodes formed by ion implantation on the polysilicon film, one end of which is connected to the drain of the LDMOS device, and the other end is connected to the Gate of the LDMOS device.
[0037] like figure 2 Shown is the diode structure in the present invention, the diode is made of polysilicon film, one end is connected to the drain of LDMOS, and the other end is connected to the gate of LDMOS
[0038] The main device in the present invention is an LDMOS device, and its cross-sectional structure is as image 3 As shown, LDMOS is a device developed from DMOS. As the name implies, it is a horizontal MOSFET, including source, gate, drain and substrate. The basic principle is to use the gate voltage to control the flow through the source and drain. current b...
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