Semiconductor thin film transistor

Abstract

The invention relates to a semiconductor thin film transistor, which comprises a substrate layer, a grid layer arranged on the substrate layer, an aluminum lead layer arranged on the grid layer, a conducting layer which is arranged on the grid layer and the aluminum lead layer and is used for forming a source and an antioxidation metal layer which is arranged between the substrate layer and the aluminum lead layer, wherein the antioxidation metal layer is electrically contacted with the aluminum lead layer and the conducting layer respectively. The antioxidation metal layer is arranged on thesubstrate layer, and the aluminum lead layer is arranged on the antioxidation metal layer after patterns are formed, so that the conducting layer which is electrically contacted with the aluminum lead layer directly is electrically contacted with the antioxidation metal layer directly, and is electrically connected with the aluminum lead layer indirectly. Therefore, the problem that contact resistance is increased due to the easily-oxidized aluminum lead layer exposed in the air in the machining process can be solved effectively, the driving capacity of the semiconductor thin film transistor can be improved effectively, and the service life of the transistor can be prolonged.

Description

【Technical field】 [0001] The invention relates to the field of semiconductor elements, in particular to a semiconductor thin film transistor. 【Background technique】 [0002] A semiconductor thin film transistor generally includes a gate, a gate insulating layer, a channel layer, and a source / drain layer structure, which is usually used as a switching element in a display, such as a liquid crystal display. [0003] Such as figure 1 and figure 2 As shown, a conventional semiconductor thin film transistor 100 includes a base layer (not shown in the figure), an aluminum oxide gate layer (not shown in the figure) disposed on the base layer, and an aluminum lead layer 110 disposed on the aluminum oxide gate layer , and a conductive layer 120 disposed on the aluminum oxide gate layer and the aluminum lead layer 110 for forming the source. [0004] After the aluminum lead layer 110 is coated, it needs to be further processed, such as engraved into a suitable pattern, etc. These ...

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Problems solved by technology

[0004] After the aluminum lead layer 110 is coated, it needs to be further processed, such as engraved into a suitable pattern, etc. These processing processes are all carried out in the atmospheric environment, but the aluminum is exposed in the atmospheric environment. It is very easy to form a layer of aluminum oxide oxide layer, and the conductivity of aluminum oxide is very low, so when the conductive layer 120 is plated on the aluminum lead layer 110, due to the existence of the oxide layer, the aluminum lead layer 110 and the conductive layer 120 are increased. contact resistance, thus affecting the driving capability and service life of the semiconductor thin film transistor 100

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