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Doped gas supply equipment and doped gas supply method

A gas supply and equipment technology, applied in the field of doping gas supply equipment, can solve the problems of wrong doping concentration, wrong doping type, etc., and achieve the effect of wide epitaxial film resistivity adjustment ability

Inactive Publication Date: 2011-08-24
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Possible limitations and difficulties hereby are wrong doping types and / or wrong doping concentrations
In particular, this poses serious problems for planned new product development and / or introduction

Method used

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  • Doped gas supply equipment and doped gas supply method
  • Doped gas supply equipment and doped gas supply method
  • Doped gas supply equipment and doped gas supply method

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Embodiment Construction

[0024] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0025] Typically, single-wafer epitaxy process reactors are usually equipped with a hybrid doping capable facility enabling direct connection to the dopant source supply line from the facility gas panel. The user can purchase another device with mixing capabilities so that another dopant source type can be selected with controlled dilution. The mixing capability ensures that the user can pass hydrogen (H 2 ) for further dilution to adjust the doping level of the epitaxial film. The gas flow rates for both dopant and hydrogen are controlled by a gas mass flow controller (MFC) through process parameter set points. This is a default configuration type for dopant sources. Another type of default configuration for dopant sources provided by equipm...

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Abstract

The invention provides doped gas supply equipment and a doped gas supply method. The doped gas supply equipment comprises a first doped gas source, a second doped gas source, a first gas switching device and a first gas mass velocity controller, wherein the input end of the first gas switching device is connected to the first doped gas source and the second doped gas source so as to connect the first doped gas source and / or the second doped gas source; and the first gas mass velocity controller is connected to the output end of the first gas switching device. The doped gas supply equipment and the doped gas supply method can obtain epitaxial film resistivity adjusting capacity of wide range.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, more specifically, the invention relates to a doping gas supply device and a doping gas supply method used in an epitaxial film growth process. Background technique [0002] In recent years, silicon epitaxial film technology used by integrated circuit (IC) manufacturing companies is gradually developing. The development of silicon epitaxial film technology is greatly attributed to the progress of the widely used silicon epitaxial manufacturing technology. A key characteristic of silicon epitaxial films is sheet resistivity or doping concentration. The performance of various power MOSFET (Metal-Oxide-Semiconductor-Field-Effect Transistor) devices in terms of rated voltage depends on the epitaxial film doping and thickness. For many process and device developers, finding the optimum doping level and selecting the doping type is always the most challenging. [0003] Different production...

Claims

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Application Information

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IPC IPC(8): C30B31/16
Inventor 黄锦才薛健
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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