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Method for limiting epitaxial growth in a photoelectric device with heterojunctions, and photoelectric device

A technology for optoelectronic devices and heterojunctions, applied in photovoltaic power generation, electrical components, semiconductor devices, etc., can solve the problems of reducing the open circuit voltage and efficiency of solar heterojunction cells

Inactive Publication Date: 2011-08-24
UNIV DE NEUCHATEL NEUCHATEL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This localized epitaxial growth has the disadvantage of reducing the open circuit voltage (Voc) and thus efficiency of solar heterojunction cells with crystalline silicon substrates

Method used

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  • Method for limiting epitaxial growth in a photoelectric device with heterojunctions, and photoelectric device
  • Method for limiting epitaxial growth in a photoelectric device with heterojunctions, and photoelectric device
  • Method for limiting epitaxial growth in a photoelectric device with heterojunctions, and photoelectric device

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Experimental program
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Embodiment

[0045] Three photovoltaic cells with heterojunctions were prepared by steps A, B, A and B, and A, B and C for texturing the crystalline silicon substrate.

[0046] Steps A and B were carried out according to the following publications: W. Sparber, O. Schultz, D. Biro, G. Emanuel, R. Preu, A. Poddey and D. Borchert, "Comparision of Texturing Methods for Monocrystalline Silicon Solar Cells Using KOH and Na 2 CO 3 ", Proc. of the 3 rd World Conf. on Photovoltaic, Osaka, 2003, in order to obtain the characteristics of the present invention.

[0047] As for step C, the matrix is ​​immersed in a freshly prepared aqueous solution consisting of: 50% hydrogen fluoride (HF), nitric acid (100% niacin), and 100% acetic acid (CH 3 COOH), ratio: 1:3:3, immersed for about 5 seconds or about 1 minute.

[0048] For comparison, according to the method described in the following publication: "Experimental Optimization of an Anisotropic etching process for random texturization of silicon so ...

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Abstract

The invention relates to a method for limiting epitaxial growth in a photoelectric device with heterojunctions including a crystalline silicon substrate and at least one layer of amorphous or microcrystalline silicon, wherein said method is characterised in that it comprises the step of texturing the crystalline silicon surface.

Description

technical field [0001] The present invention relates to the field of optoelectronic devices and, more particularly, to methods for suppressing epitaxial growth in optoelectronic devices having heterojunctions comprising a crystalline silicon substrate. The invention also relates to said optoelectronic device. [0002] The invention finds particularly interesting application for photovoltaic cells intended for the production of electrical energy, but it finds more general application in any structure in which optical radiation is converted into an electrical signal, such as photodetectors. Background technique [0003] It is known that optoelectronic devices with heterojunctions comprise a crystalline silicon substrate covered with one or several layers of amorphous or microcrystalline silicon. Thus, such a device may sequentially comprise a crystalline silicon substrate, a layer of hydrogenated amorphous silicon, and a layer of hydrogenated microcrystalline silicon. [000...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/072H01L31/18H01L31/20H01L31/0745
CPCH01L31/0745H01L31/1804H01L31/202H01L31/02363Y02E10/50H01L31/0747Y02P70/50
Inventor S·奥利贝特C·莫纳琼J·达蒙-拉考斯特C·巴里夫
Owner UNIV DE NEUCHATEL NEUCHATEL