Resistor random access memory for reducing initializing or setting operation power consumption and operating method thereof

Abstract

The invention belongs to the technical field of nonvolatile memories, in particular to a resistor random access memory for reducing initializing or setting operation power consumption and an operating method thereof. In the resistor random access memory, through adding a feedback resistor and a comparer, changes of states of a storage resistor in the resistor random access memory during the initializing or setting operation is fed back in real time, thus unnecessary time of initializing voltages or offsetting position voltages can be saved after the initializing or setting operation is succeeded, and power consumption of the resistor random access memory can be greatly reduced. Meanwhile, subsequent read checking operation steps are not needed in an initializing operation method or setting operation method of the resistor random access memory, therefore, read and write accesses of the resistor random access memory are separately optimized.

Description

technical field [0001] The invention belongs to the technical field of non-volatile memory, and in particular relates to a resistive random access memory (Resistive Random Access Memory, RRAM) and its operating method, and in particular to an initialization (Forming) or setting (Set) operation through real-time feedback control to reduce power Consumed RRAM and its corresponding initialization or setting (Set) operation method. Background technique [0002] Resistive Random Access Memory (RRAM) stores information by utilizing the obvious bistable characteristics of storage media (such as certain binary metal oxides). Under the action of electrical signals (current pulse signal or voltage pulse signal), the storage medium of RRAM makes the storage medium reversible between the high resistance state (High Resistance State, HRS) and the low resistance state (Low Resistance State, LRS) Conversion, so as to realize the storage function. These two states can be conveniently conv...

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Problems solved by technology

However, after the Set operation or Form operation occurs at the T2 time point, the storage resistance changes to a low resistance state, and the current increases greatly, so the power consumption from T2 to T3 increases sharply, which is the high power consumption part shown in the figure

It can be seen from the above that the power consumption of the Forming operation (initialization operation) or Set operation of RRAM is mainly consumed in the time period after the storage resistance changes to a high-impedance state

[0005] On the other hand, generally speaking, there will be process fluctuations in the manufacturing process of memory, so there are also differences in the forming or set time between memory cells.

Usually a longer pulse time is taken statistically to ensure that all memory cells can be formed or set successfully. Therefore, when the process fluctuates greatly, the actual forming or set time of some memory cells is longer than the set time. The Forming or Set time is much shorter, so the wasted power consumption on the low resistance after Forming or Set will be greater

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