Unlock instant, AI-driven research and patent intelligence for your innovation.

Silicon carbide substrate and method for production thereof

A silicon carbide substrate, silicon carbide ingot technology, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, crystal growth and other directions, can solve problems such as the influence of electron mobility

Inactive Publication Date: 2011-08-31
SUMITOMO ELECTRIC IND LTD
View PDF8 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As mentioned above, it is known that crystal orientation (plane orientation) has a strong influence on electron mobility even when MOSFETs are fabricated on the same plane

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon carbide substrate and method for production thereof
  • Silicon carbide substrate and method for production thereof
  • Silicon carbide substrate and method for production thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0062] refer to Figure 1~3 , the SiC substrate 10 according to one embodiment of the present invention will be described. Such as figure 1 with 2 As shown in , SiC substrate 10 has main surface 11 , first orientation plane 12 and second orientation plane 13 .

[0063] The main face 11 has a circular or elliptical planar shape. When the main face 11 is viewed from above, the circular or elliptical shape partially includes a straight line portion due to the first orientation plane 12 and the second orientation plane 13 . In this regard, the phrase "the main surface 11 has a circular or elliptical planar shape" as used herein includes a case where the circular or elliptical shape part has a notch in the planar shape.

[0064] The main surface 11 has an angle of not less than 50° and not more than 65° in the direction and an angle of not less than -10° and not more than 10° in the direction relative to the {0001} plane Angled. The main surface 11 may be inclined at 0° in ...

Embodiment approach 2

[0101] refer to Figure 10 with 11 , the SiC substrate 30 of the present embodiment will be described. Such as Figure 10 with 11 As shown in , the SiC substrate 30 has a main surface 31 having a rectangular planar shape at an angle of not less than 50° and not more than 65° in the direction with respect to the {0001} plane And tilt at an angle not less than -10° and not more than 10° in the direction. In the present embodiment, when SiC substrate 30 is viewed from above, main surface 31 has a shape having a notch formed in one corner of a quadrangle.

[0102] The main surface 31 has a first side 31a, a second side 31b, and a third side 31c. The first side 31a is parallel to the direction. The second side 31b is in a direction perpendicular to the first side 31a. In this embodiment, the second side 31b and image 3The direction shown in X is parallel. The third side 31c connects the first side 31a to the second side 31b.

[0103] The length L31a of the third side ...

Embodiment approach 3

[0118] refer to Image 6 with 17 , the SiC substrate 40 of the present embodiment will be described. Such as Figure 16 with 17 As shown in , the SiC substrate 40 of the present embodiment has a main surface 41 having a rectangular planar shape with an angle of not less than 50° and not more than 65° and tilted at an angle not less than -10° and not more than 10° in the direction. In the present embodiment, main surface 31 has a quadrangular shape when SiC substrate 30 is viewed from above. Although another rectangular planar shape may be used, it is preferable to use a quadrangular shape from the viewpoint of increasing the area of ​​the main face 41 .

[0119] The main surface 41 has a first side 41 a, a second side 41 b, and marks (marks) 45 . The first side 41a is parallel to the direction. The second side 41b is in a direction perpendicular to the first side 41a. In this embodiment, the second side 41b and image 3 The direction shown in X is parallel.

[0120...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A SiC substrate is equipped with a first orientation flat (12) parallel to the <11-20> axis and a second orientation flat (13) having a direction that intersects the first orientation flat (12) and having a different length to the first orientation flat (12). Another SiC substrate has a planar rectangular shape, and the principle surface of said SiC substrate has a first side parallel to the <11-20> axis, a second side perpendicular to the first side, and a third side that connects the first and second sides. The length of the third side extended in the direction projected over the first side differs from the length of the third side extended in the direction projected over the second side.

Description

technical field [0001] The present invention relates to silicon carbide substrates and methods of manufacturing silicon carbide substrates. Background technique [0002] Compared with silicon (Si), silicon carbide (SiC) has a wide band gap, high maximum breakdown electric field, and high thermal conductivity, and the carrier mobility is almost as high as silicon, and has a high saturation electron drift speed and high withstand voltage. Therefore, it is expected to apply silicon carbide to semiconductor devices that are required to have higher efficiency, higher withstand voltage, and higher capacity. [0003] One of such known semiconductor devices is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) of SiC (for example, Non-Patent Document 1). Non-Patent Document 1 discloses that when a MOSFET is fabricated on the (11-20) plane of a SiC substrate, the leakage current in the <1-100> direction is three times that in the <0001> direction. As describe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02C30B29/36
CPCH01L2223/5442H01L29/66068H01L2223/54406H01L29/7802C30B29/36H01L23/544H01L2223/54493H01L2223/54433H01L29/0657H01L29/1608H01L29/045H01L2924/0002Y10T83/04H01L2924/00H01L21/02
Inventor 佐佐木信增田健良
Owner SUMITOMO ELECTRIC IND LTD