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Infrared receiving and amplifying circuit realized through CMOS (Complementary Metal-Oxide-Semiconductor Transistor) technology

A technology of infrared receiving and amplifying circuits, applied in non-electrical signal transmission systems, signal transmission systems, instruments, etc., can solve the problem of increasing the cost of remote control components and manufacturing processes, the inability to integrate learning remote controls, and reducing the reliability of remote controls And other issues

Inactive Publication Date: 2011-09-14
HANGZHOU XINSAI MICRO ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The circuit disclosed in this patent is a common practice for learning remote controls at present, but the circuit must require 2 PNPs and 1 NPN triode and several discrete components such as resistors and capacitors, which increases the cost of components and manufacturing processes of the remote control. Also reduces the reliability of the remote control
This circuit is not suitable for CMOS technology, so it cannot be integrated into the main chip of the learning remote control

Method used

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  • Infrared receiving and amplifying circuit realized through CMOS (Complementary Metal-Oxide-Semiconductor Transistor) technology
  • Infrared receiving and amplifying circuit realized through CMOS (Complementary Metal-Oxide-Semiconductor Transistor) technology

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Embodiment Construction

[0013] In the following detailed description, specific details are described in order to provide a thorough understanding of the present invention. Those skilled in the art will recognize, however, that the invention may be practiced with other similar details.

[0014] attached figure 1 In order to support the infrared signal receiving and amplifying circuit of the present invention. In terms of design, according to the characteristics of N-well CMOS technology, PNP1 and PNP2 are both parasitic lateral transistors. The current amplification factor β of this type of lateral transistor is relatively small, so the Darlington structure is adopted to increase the current amplification factor. When the infrared emitting diode receives the infrared signal, it will induce a weak reverse current because of its photosensitive characteristics. After the reverse current is recorded and amplified by the PNP tube of the 2-stage Darlington structure, the voltage of the positive input termi...

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Abstract

The invention relates to a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) integrated circuit, in particular to an infrared receiving and amplifying circuit which caters to learning remote controllers and is suitable for being realized through CMOS integrated circuit technology. The infrared receiving and amplifying circuit is suitable for being realized by the N-trap CMOS technology, can be integrated in a main chip of the learning remote controller conveniently, and can avid other devices except for an infrared emitting diode necessary to infrared emission. According to the characteristics of the N-trap CMOS technology, a parasitic transverse triode with a smaller current amplification factor beta is used, so a Darlington structure is adopted to improve the current amplification factor.

Description

technical field [0001] The invention relates to a CMOS integrated circuit, in particular to a learning-oriented remote controller and an infrared receiving amplifying circuit suitable for the realization of the CMOS integrated circuit technology. Background technique [0002] With the popularization of digital TV, learning remote controllers for set-top boxes and TV applications are now very common. Compared with the traditional remote control, the learning remote control can learn the 6 to 8 buttons commonly used in the TV remote control on the basis of remote control of the set-top box, and realize the function of simultaneously controlling the set-top box and the TV with one remote control . [0003] The infrared receiving amplifying circuit is the key to the learning remote control to achieve receiving learning. In order to save costs, the original infrared emitting diode photosensitive characteristics of the remote control are generally used as the receiving diode. Th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G08C23/04
Inventor 袁胜
Owner HANGZHOU XINSAI MICRO ELECTRONICS