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Control of erosion profile on a dielectric RF sputter target

A technology of sputtering target and magnetron, which is applied in the direction of sputtering coating, circuit, discharge tube, etc., and can solve the problem that the nitrogen concentration cannot be repeated

Active Publication Date: 2011-09-14
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This variable nitrogen concentration is not repeatable across multiple substrates

Method used

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  • Control of erosion profile on a dielectric RF sputter target
  • Control of erosion profile on a dielectric RF sputter target
  • Control of erosion profile on a dielectric RF sputter target

Examples

Experimental program
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Embodiment Construction

[0019] The present invention generally includes sputtering target assemblies useful in radio frequency sputtering processes. A sputter target assembly can include a backing plate and a sputter target. The backing plate can be shaped to have one or more fins extending from the backing plate toward the sputtering target. A sputtering target can be bonded to the fins of the backplate. The radio frequency current utilized during the sputtering process will be applied to the sputtering target at one or more fin locations. The fins may extend from the backplane at locations corresponding to the magnetic fields created by the magnetrons disposed behind the backplane. Erosion of the sputter target can be controlled by controlling the position at which the RF current is coupled to the sputter target in alignment with the magnetic field.

[0020] The invention will be described below with reference to a PVD chamber. PVD chambers that may be utilized in the practice of the present in...

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PUM

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Abstract

The present invention generally includes a sputtering target assembly that may be used in an RF sputtering process. The sputtering target assembly may include a backing plate and a sputtering target. The backing plate may be shaped to have one or more fins that extend from the backing plate towards the sputtering target. The sputtering target may be bonded to the fins of the backing plate. The RF current utilized during a sputtering process will be applied to the sputtering target at the one or more fin locations. The fins may extend from the backing plate at a location that corresponds to a magnetic field produced by a magnetron that may be disposed behind the backing plate. By controlling the location where the RF current is coupled to the sputtering target to be aligned with the magnetic field, the erosion of the sputtering target may be controlled.

Description

technical field [0001] Embodiments of the invention generally relate to physical vapor deposition (PVD) devices. More specifically, it relates to radio frequency (RF) magnetron sputtering devices. Background technique [0002] Physical vapor deposition processes are generally used to deposit layer materials on a substrate in a processing chamber. The body of material or target is attached to the backing plate. A power supply is coupled to the backplate, or directly to the sputter target to provide current to the target. The electric current ignites the processing gas in the processing chamber into a plasma. The sputter target is bombarded by ions from the plasma, which cause atoms of the sputter target to be sputtered from the sputter target. [0003] One form of sputtering is reactive sputtering. In reactive sputtering processes, the sputter target may comprise a material, such as a metal, that reacts with the process gas to form a layer on the substrate that has a dif...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/203
CPCH01J37/3408C23C14/3407H01J37/347H01J37/32082Y10T156/10
Inventor 约翰·C·福斯特丹尼尔·J·霍夫曼约翰·A·派披托恩唐先民汪荣军
Owner APPLIED MATERIALS INC