Ion implantation system and method

Abstract

The invention discloses an ion implantation system comprising an ion source and an extractor, a quality analysis magnet, a first acceleration-deceleration device, a deflecting magnet, a second acceleration-deceleration device and a work piece scanner. The deflecting magnet makes ion beams within a preset charge-to-mass ratio range divergent; the system further comprises a correction magnet arranged between the deflecting magnet and the second acceleration-deceleration device, and the correction magnet is used for correcting the ion beam deflected and diverged by the deflecting magnet within the preset charge-to-mass ratio range to be a preset implantation angle. The invention further discloses an ion implantation method realized by utilizing the ion implantation system. Through the ion implantation system and method, disclosed by the invention, the evenness of dosage of ions implanted into a large wafer work piece can be improved, thus the production efficiency is improved, and the cost consumed due to the comprehensive update of the whole ion implantation system can be largely saved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an ion implantation system and method. Background technique [0002] The ion implantation process is used to introduce atoms or molecules, usually called impurities, into the target substrate, thereby changing the physical and chemical properties of the substrate material. Of particular interest is the use of ion implantation to dope single or polycrystalline silicon, a routine process for the manufacture of modern integrated circuits. As the production of semiconductor products has gradually moved towards larger wafers (from 8 inches to 12 inches, and is now developing to 18 inches), the single wafer process (processing one wafer at a time) has recently been widely adopted. However, the larger the wafer workpiece, the longer it takes to implant, and at the same time, it becomes more and more difficult to achieve a certain implant dose uniformity and implant angle unif...

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to overcome the defect that the ion implantation system in the prior art is difficult to apply to ion implantation of larger-sized wafer workpieces, and to provide an ion implantation method suitable for larger-sized wafer workpieces. System and method

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