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Electrode circuit, film formation device, electrode unit, and film formation method

A technology of electrodes and circuits, applied in circuits, electrical components, discharge tubes, etc., can solve problems such as uneven thickness, electrode balance damage, and film thickness

Inactive Publication Date: 2011-09-28
ULVAC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When a film is formed on the inner wall of the chamber in this way, the film may be peeled off due to impact during carrier transport or during the film forming process, which may cause particle formation
[0009] In addition, when both the mask and the anode are electrically grounded, the film formed on the periphery of the mask closer to the cathode is thicker, and as a result, there is a problem that the thickness of the film formed on the substrate is not uniform.
[0010] Furthermore, in the case of arranging a plurality of high-frequency electrodes in one film formation chamber as in the CVD apparatus of Patent Document 1, if a matching circuit is constituted by an unbalanced circuit, there is a problem that one matching circuit is damaged due to failure or the like. When it fails to work, the electrode balance (discharge balance) of other high-frequency electrodes is broken, and the film formation state of each substrate becomes uneven

Method used

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  • Electrode circuit, film formation device, electrode unit, and film formation method
  • Electrode circuit, film formation device, electrode unit, and film formation method
  • Electrode circuit, film formation device, electrode unit, and film formation method

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no. 1 approach

[0070] according to Figure 1 to Figure 28 The film forming apparatus (thin-film solar cell manufacturing apparatus) according to the first embodiment of the present invention will be described.

[0071] (thin film solar cell)

[0072] figure 1 It is a cross-sectional view schematically showing an example of the thin-film solar cell 100 manufactured by the thin-film solar cell manufacturing apparatus of this embodiment. Such as figure 1 As shown, a thin-film solar cell 100 is laminated by: a substrate W (such as a glass substrate) constituting its surface, an upper electrode 101 composed of a transparent conductive film disposed on the substrate W, and a top cell 102 composed of amorphous silicon. , an intermediate electrode 103 made of a transparent conductive film, a bottom cell 104 made of microcrystalline silicon, a buffer layer 105 made of a transparent conductive film, and a metal The back electrode 106 composed of a film is formed. That is, the thin film solar cell...

no. 2 approach

[0159] Use below Figure 29 , 30 The electrode circuit, electrode unit, and film forming apparatus (thin-film solar cell manufacturing apparatus 10 ) according to the second embodiment of the present invention will be described. This embodiment differs from the first embodiment only in the structure of the cathode unit and the matching circuit, and the other structures are substantially the same as the first embodiment. Therefore, the same symbols are assigned to the same positions, and detailed descriptions are omitted.

[0160] The thin-film solar cell manufacturing apparatus 10 in this embodiment includes the same as the thin-film solar cell manufacturing apparatus 10 in the first embodiment: a film forming chamber 11 capable of performing bottom cells 104 (semiconductor cells) made of microcrystalline silicon on a plurality of substrates W at the same time. layer) film formation; the loading and unloading chamber 13 can simultaneously accommodate the substrate W1 before ...

no. 3 approach

[0170] The following is based on Figure 31 The electrode circuit, electrode unit, and film forming apparatus (thin-film solar cell manufacturing apparatus) according to the third embodiment of the present invention will be described.

[0171] Here, the present embodiment differs from the aforementioned second embodiment in that, in the cathode unit 118 of the aforementioned second embodiment, a pair of RF applying members 119 are arranged substantially parallel to each other with insulating members 120 at intervals. In the cathode unit 128 of the present embodiment, a pair of cathodes (RF application members) 119 are arranged substantially parallel to each other at intervals of the blocking mechanism (ground shield) 130 that blocks electrical conduction.

[0172] The blocking mechanism 130 is constituted by a flat ground plate 131 disposed substantially at the center in the width direction of the cathode unit 128 , and a pair of shield portions 132 , 132 disposed on both side...

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Abstract

Provided is an electrode circuit for the plasma CVD. The electrode circuit includes: an AC power source, a matching circuit connected to the AC power source, and a parallel flat electrode formed by an anode and a cathode which are arranged so that the electrode face of the anode and that of the cathode oppose to each other. The matching circuit, the parallel flat electrode, and plasma generated by the parallel flat electrode constitute a balanced circuit.

Description

technical field [0001] The invention relates to an electrode circuit, a film forming device, an electrode unit and a film forming method. [0002] this application claims priority based on Japanese Patent Application No. 2008-289590 for which it applied to Japan on November 12, 2008, and uses the content here. Background technique [0003] In current solar cells, monocrystalline silicon (Si) type and polycrystalline silicon type occupy most of them, but there are concerns about shortage of silicon materials and the like. Therefore, in recent years, demand for thin-film solar cells with low manufacturing costs, less risk of material shortage, and on which a thin-film silicon layer is formed has risen. Furthermore, in addition to existing forms of thin-film solar cells having only an amorphous silicon (a-Si) layer, recently, efforts have been made to achieve photoelectric conversion efficiency by laminating an a-Si layer and a microcrystalline silicon (μc-Si) layer. (Hereina...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/509H01L21/205H01L31/04H05H1/46
CPCH05H1/30H01L21/67207H01L31/03762C23C16/4583H01L21/67754H01J37/32091H01J37/32183H01L31/03685Y02E10/548H01L21/67736H01L31/1876H01L21/67712H01L21/67161Y02E10/547H01L31/1804H01L31/072H01L31/202Y02E10/545H01L21/6719H01L31/0725C23C16/5096Y02E10/50H01L21/67173Y02P70/50H05H1/46
Inventor 松本浩一依田英德冈山智彦森冈和矢岛太郎
Owner ULVAC INC